Thin film transistor with multiple oxide semiconductor layers

ABSTRACT

A transistor having high field-effect mobility is provided. In order that an oxide semiconductor layer through which carriers flow is not in contact with a gate insulating film, a buried channel structure in which the oxide semiconductor layer through which carriers flow is separated from the gate insulating film is employed. Specifically, an oxide semiconductor layer having high conductivity is provided between two oxide semiconductor layers. Further, an impurity element is added to the oxide semiconductor layer in a self-aligned manner so that the resistance of a region in contact with an electrode layer is reduced. Further, the oxide semiconductor layer in contact with the gate insulating layer has a larger thickness than the oxide semiconductor layer having high conductivity.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a semiconductor device including anoxide semiconductor and a manufacturing method thereof.

In this specification, a semiconductor device generally means a devicewhich can function by utilizing semiconductor characteristics, and anelectrooptic device, a semiconductor circuit, and electronic equipmentare all semiconductor devices.

2. Description of the Related Art

In recent years, semiconductor devices have been developed to be usedmainly for an LSI, a CPU, or a memory. A CPU is an aggregation ofsemiconductor elements each provided with an electrode which is aconnection terminal, which includes a semiconductor integrated circuit(including at least a transistor and a memory) separated from asemiconductor wafer.

A semiconductor circuit (IC chip) of an LSI, a CPU, or a memory ismounted on a circuit board, for example, a printed wiring board, to beused as one of components of a variety of electronic devices.

A technique for manufacturing a transistor by using an oxidesemiconductor film for a channel formation region, or the like has beenattracting attention. Examples of such a transistor include a transistorin which zinc oxide (ZnO) is used as an oxide semiconductor film and atransistor in which InGaO₃(ZnO)_(m) is used as an oxide semiconductorfilm.

Patent Document 1 discloses a three-layer structure in which a firstmulti-component oxide semiconductor layer is provided over a substrate,a one-component oxide semiconductor layer is stacked over the firstmulti-component oxide semiconductor layer, and a second multi-componentoxide semiconductor layer is stacked over the one-component oxidesemiconductor layer.

Non-Patent Document 1 discloses a transistor having a stack of oxidesemiconductors.

REFERENCE Patent Document

-   [Patent Document 1] Japanese Published Patent Application No.    2011-155249

Non-Patent Document

-   [Non-Patent Document 1] Arokia Nathan et al., “Amorphous Oxide TFTs:    Progress and issues”, SID 2012 Digest pp. 1-4.

SUMMARY OF THE INVENTION

The electrical characteristics of a transistor including an oxidesemiconductor layer are varied by influence of an insulating film incontact with the oxide semiconductor layer, that is, by an interfacestate between the oxide semiconductor layer and the insulating film.

For example, in the case where an insulating film containing silicon isused as the insulating film, when the oxide semiconductor layer isdeposited on the silicon oxide film by a sputtering method, siliconmight enter the oxide semiconductor layer at the time of the sputtering.In the structure of Non-Patent Document 1, an oxide semiconductorfunctioning as a channel is in contact with silicon oxide, and thussilicon, which is a constituent atom of the silicon oxide film, mightenter the channel, as an impurity. When an impurity such as siliconenters the oxide semiconductor layer, the field-effect mobility of thetransistor might decrease.

Further, when a silicon nitride film is used as the insulating film,many carriers flow through the interface between the silicon nitridefilm and the oxide semiconductor layer, and thus it is difficult toobtain transistor characteristics.

An object of one embodiment of the present invention is to provide astructure of a transistor having high field-effect mobility.

Thus, in order that an oxide semiconductor layer through which carriersflow is not in contact with a gate insulating film containing silicon, aburied channel structure in which the oxide semiconductor layer throughwhich carriers flow is separated from the gate insulating filmcontaining silicon is employed. Further, in the case where an oxidesemiconductor layer is provided over a base insulating film and a gateinsulating film is provided over the oxide semiconductor layer, in orderthat the oxide semiconductor layer through which carriers flow is not incontact with the base insulating film containing silicon, it ispreferable to employ a buried channel structure in which the oxidesemiconductor layer through which carriers flow is separated from thebase insulating film containing silicon.

Specifically, as illustrated in FIG. 1A, a first oxide semiconductorfilm 403 a, a second oxide semiconductor film 403 b, and a third oxidesemiconductor film 403 c are stacked in this order, and the second oxidesemiconductor film 403 b is made to an n-type in order that a conductionband offset (Ec) in an energy band diagram (schematic diagram)illustrated in FIG. 1B is greater than or equal to 0.05 eV andpreferably greater than or equal to 0.1 eV. The energy band diagram inFIG. 1B is an energy band which corresponds to a portion between C andC′ in FIG. 1A. Note that the energy band diagram illustrated in FIG. 1Bis mealy an example and thus does not limit the present invention. Anystructure of the energy band diagram may be employed as long as theenergy level of the bottom of the conduction band in a second oxidesemiconductor layer S2 is lower than those of the bottoms of theconduction band in a first oxide semiconductor layer S1 and a thirdoxide semiconductor layer S3.

As a way to make the second oxide semiconductor layer S2 an n-type, thesecond oxide semiconductor layer S2 is deposited by a sputtering methodin a mixed atmosphere containing nitrogen or dinitrogen monoxide. Asanother way to make the second oxide semiconductor layer S2 an n-type,deposition is performed using a sputtering target containing a verysmall amount of boron or phosphorus so that the second oxidesemiconductor layer S2 contains boron or phosphorus.

As a material of the first oxide semiconductor layer S1, a materialwhich can be represented as M1_(a)M2_(b)M3_(c)O_(x) (a is a real numbergreater than or equal to 0 and less than or equal to 2, b is a realnumber greater than 0 and less than or equal to 5, c is a real numbergreater than or equal to 0 and less than or equal to 5, and x is anarbitrary real number) is used. Ga, Mg, Hf, Al, Zr, Sn, or the like canbe used as the constituent element M2 to function as a stabilizer forreducing the number of oxygen vacancies in an oxide semiconductor. Asanother stabilizer, one or plural kinds of lanthanoid such as lanthanum(La), cerium (Ce), praseodymium (Pr), neodymium (Nd), samarium (Sm),europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium(Ho), erbium (Er), thulium (Tm), ytterbium (Yb), or lutetium (Lu) may becontained. As the constituent element M1, indium or the like is used. Asthe constituent element M3, zinc or the like is used.

Typically, for the first oxide semiconductor layer S1, a gallium oxidefilm, a gallium zinc oxide film, or a material film in which the contentof the constituent element M2 is higher than the content of theconstituent element M1 is used. For example, an In—Ga—Zn-based oxidefilm which is deposited using a sputtering target having any of atomicratios of In:Ga:Zn=1:3:2, In:Ga:Zn=1:4:2, and In:Ga:Zn=1:5:4 is used. Informing the first oxide semiconductor layer, deposition is preferablyperformed by a sputtering method in a mixed atmosphere containing moreoxygen than a rare gas and more preferably in an oxygen atmosphere(oxygen: 100%), and the resulting oxide semiconductor layer can also bereferred to as a first I-type oxide semiconductor layer. The firstI-type oxide semiconductor layer is a highly purified oxidesemiconductor layer that contains impurities other than the maincomponents of the oxide semiconductor layer as little as possible and isan I-type (intrinsic) oxide semiconductor or close thereto. In such anoxide semiconductor layer, the Fermi level (Ef) can be at the same levelas the intrinsic Fermi level (Ei).

For the second oxide semiconductor layer S2, a material which can berepresented as M4_(d)M5_(e)M6_(f)O_(x) (d is a real number greater than0 and less than or equal to 5, e is a real number greater than or equalto 0 and less than or equal to 3, f is a real number greater than 0 andless than or equal to 5, and x is an arbitrary positive number) is used.Ga, Mg, Hf, Al, Zr, Sn, or the like can be used as the constituentelement M5 to function as a stabilizer for reducing the number of oxygenvacancies in an oxide semiconductor. As another stabilizer, one orplural kinds of lanthanoid such as lanthanum (La), cerium (Ce),praseodymium (Pr), neodymium (Nd), samarium (Sm), europium (Eu),gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium(Er), thulium (Tm), ytterbium (Yb), or lutetium (Lu) may be contained.As the constituent element M4, indium or the like is used. As theconstituent element M6, zinc or the like is used. Typically, a materialfilm in which the content of the constituent element M4 is higher thanthe content of the constituent element M5 is used. For example, anIn—Ga—Zn-based oxide film which is deposited using a sputtering targethaving an atomic ratio of In:Ga:Zn=3:1:2 is used. In forming the secondoxide semiconductor layer, deposition is preferably performed by asputtering method in a mixed atmosphere containing nitrogen or a mixedatmosphere containing dinitrogen monoxide, and the resulting oxidesemiconductor layer is also referred to as an N-type oxide semiconductorlayer. Note that the N-type oxide semiconductor layer has higher carrierdensity and higher conductivity σ than the first I-type oxidesemiconductor layer.

For the third oxide semiconductor layer S3, a material which can berepresented as M7_(g)M8_(h)M9_(i)O_(x) (g is a real number greater thanor equal to 0 and less than or equal to 2, h is a real number greaterthan 0 and less than or equal to 5, i is a real number greater than orequal to 0 and less than or equal to 5, and x is an arbitrary realnumber) is used. Ga, Mg, Hf, Al, Zr, Sn, or the like can be used as theconstituent element M8 to function as a stabilizer for reducing thenumber of oxygen vacancies in an oxide semiconductor. As anotherstabilizer, one or plural kinds of lanthanoid such as lanthanum (La),cerium (Ce), praseodymium (Pr), neodymium (Nd), samarium (Sm), europium(Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho),erbium (Er), thulium (Tm), ytterbium (Yb), or lutetium (Lu) may becontained. As the constituent element M7, indium or the like is used. Asthe constituent element M9, zinc or the like is used. Typically, amaterial film in which the content of the constituent element M7 issubstantially equal to the content of the constituent element M8 isused. For example, an In—Ga—Zn-based oxide film which is deposited usinga sputtering target having an atomic ratio of In:Ga:Zn=1:1:1 is used. Informing the third oxide semiconductor layer, deposition is preferablyperformed by a sputtering method in a mixed atmosphere containing moreoxygen than a rare gas and preferably in an oxygen atmosphere (oxygen:100%), and the resulting oxide semiconductor layer can also be referredto as a second I-type oxide semiconductor layer.

Note that the materials of the first and second oxide semiconductorlayers S1 and S2 may be selected so that the energy level of the bottomof the conduction band in the second oxide semiconductor layer S2 islower than that of the bottom of the conduction band in the first oxidesemiconductor layer S1, and the compositions of the above materials maybe adjusted as appropriate.

Further, the materials of the second and third oxide semiconductorlayers S2 and S3 may be selected so that the energy level of the bottomof the conduction band in the second oxide semiconductor layer S2 islower than that of the bottom of the conduction band in the third oxidesemiconductor layer S3, and the compositions of the above materials maybe adjusted as appropriate.

The second oxide semiconductor layer S2, the S1, and the S3 have atleast one common constituent element.

In the case where a transistor is formed in which the conductivity ofthe second oxide semiconductor layer S2 is increased using such athree-layer structure, a distance between the second oxide semiconductorlayer S2 and a drain electrode, i.e., the thickness of the third oxidesemiconductor layer S3 becomes dominant, so that a channel length Lapparently becomes smaller in the forward direction, and an on-statecurrent can be increased. In the reverse direction, the third oxidesemiconductor layer S3 is depleted and a sufficiently small off statecurrent can be achieved.

In a structure of one embodiment of the present invention disclosed inthis specification, between two oxide semiconductor layers, an oxidesemiconductor layer which has higher conductivity σ than the two oxidesemiconductor layers may be provided, and an example of the structure isa transistor 418 illustrated in FIG. 1A. Note that the cross-sectionalview of the transistor 418 in FIG. 1A corresponds to a structural viewtaken along a chain line A1-A2 in a top view in FIG. 1C. FIG. 1Dillustrates a cross-sectional view taken along a dotted line A2-A3 inFIG. 1C.

A structure of one embodiment of the present invention disclosed in thisspecification is a semiconductor device including a first insulatinglayer over an insulating surface, a first oxide semiconductor layer overthe first insulating layer, a second oxide semiconductor layer over thefirst oxide semiconductor layer, a third oxide semiconductor layer overthe second oxide semiconductor layer, and a second insulating layer overthe third oxide semiconductor layer. The second oxide semiconductorlayer has higher conductivity than the third oxide semiconductor layerand the first oxide semiconductor layer.

In the above structure, to increase the conductivity of the second oxidesemiconductor layer, the second oxide semiconductor layer is made tohave a higher nitrogen concentration, boron concentration, or phosphorusconcentration than the third oxide semiconductor layer and the firstoxide semiconductor layer. An atmosphere containing nitrogen ordinitrogen monoxide may be used for depositing the second oxidesemiconductor layer, whereby the second oxide semiconductor layer havinghigh conductivity σ may be obtained.

In the above structure, as illustrated in FIG. 1A, the thickness of thefirst oxide semiconductor film 403 a is set larger than that of each ofthe second oxide semiconductor film 403 b and the third oxidesemiconductor film 403 c, whereby influence of diffusion of silicon orthe like contained in the base film is reduced.

In the above structure, the side surface of the second oxidesemiconductor layer may be covered with the third oxide semiconductorlayer. The structure in which the side surface of the second oxidesemiconductor layer is not in direct contact with a source electrodelayer or a drain electrode layer can lead to a reduction in leakagecurrent.

In the above structure, the first insulating layer is an insulating filmcontaining silicon, and the second insulating layer is an insulatingfilm containing gallium. As illustrated in FIG. 1D, an insulating film402 formed using an insulating film containing gallium is provided tocover and be in contact with the side surface of the second oxidesemiconductor film 403 b, whereby leakage current can be reduced.

In the case of a top-gate transistor, a gate electrode layer is furtherprovided over the second insulating layer in the above structure.Although the transistor 418 in FIG. 1A is a top-gate transistor, oneembodiment of the present invention is not particularly limited to thetop-gate transistor in FIG. 1A.

FIG. 16A illustrates another example of a top-gate transistor. To obtaina buried channel structure, specifically, the first oxide semiconductorlayer S1, the second oxide semiconductor layer S2, and the third oxidesemiconductor layer S3 are stacked in this order, and an oxidesemiconductor material having high conductivity σ is used for a channelformation region 103 b illustrated in FIG. 16B for the purpose ofobtaining an energy difference greater than or equal to 0.05 eV,preferably greater than or equal to 0.1 eV in an energy band diagram(schematic diagram) in FIG. 16C. Note that the energy band diagramillustrated in FIG. 16C is mealy an example and thus does not limit thepresent invention. Any structure of the energy band diagram may beemployed as long as the energy level of the bottom of the conductionband in the second oxide semiconductor layer S2 is lower than those ofthe bottoms of the conduction band in the first oxide semiconductorlayer S1 and the third oxide semiconductor layer S3.

As a way to increase the conductivity σ of the second oxidesemiconductor layer S2 overlapping with a gate electrode layer 101, thesecond oxide semiconductor layer S2 is deposited by a sputtering methodin an atmosphere containing nitrogen or dinitrogen monoxide. As anotherway to increase the conductivity σ of the second oxide semiconductorlayer S2, deposition is performed using a sputtering target containing avery small amount of boron or phosphorus so that the second oxidesemiconductor layer S2 contains boron or phosphorus.

The third oxide semiconductor layer S3 is formed to overlap with thegate electrode layer 101, and low-resistance regions 104 c and 108 cwhich do not overlap with the gate electrode layer 101 are n-type. Inorder that the low-resistance regions 104 c and 108 c not overlappingwith the gate electrode layer 101 are electrically connected to a sourceelectrode layer and a drain electrode layer, the low-resistance regions104 c and 108 c are preferably regions having low resistance. Further,the low-resistance regions 104 c and 108 c are preferably formed in aself-aligned manner using the gate electrode layer 101 as a mask.

As a way to form the low-resistance regions 104 c and 108 c that aren-type, the gate electrode layer 101 is used as a mask, and thelow-resistance regions 104 c and 108 c are formed by addition ofnitrogen, boron, or phosphorus in a self-aligned manner by an ionimplantation method. As another way to form the low-resistance regionsthat are n-type, a nitride insulating film (typically, a silicon nitridefilm 107) is formed in contact with the third oxide semiconductor layerS3 or the third oxide semiconductor layer S3 is subjected to nitrogenplasma treatment.

Another structure of one embodiment of the present invention disclosedin this specification is a semiconductor device including a firstinsulating layer over an insulating surface, a first oxide semiconductorlayer over the first insulating layer, a second oxide semiconductorlayer over the first oxide semiconductor layer, a third oxidesemiconductor layer over the second oxide semiconductor layer, a secondinsulating layer on and in contact with the third oxide semiconductorlayer, a gate electrode layer over the second insulating layer, and athird insulating layer on and in contact with the third oxidesemiconductor layer. The second oxide semiconductor layer has a smallerthickness than the first oxide semiconductor layer and the third oxidesemiconductor layer.

In the above structure, a region of the third oxide semiconductor layerwhich is in contact with the third insulating layer has lowcrystallinity and has a higher nitrogen concentration than a region ofthe third oxide semiconductor layer which is in contact with the secondinsulating layer. The region of the third oxide semiconductor layerwhich is in contact with the second insulating layer overlaps with achannel formation region of the second oxide semiconductor layer. Thethird insulating layer is a silicon nitride film, and thus the region ofthe third oxide semiconductor layer which is in contact with the thirdinsulating layer can have a higher nitrogen concentration than theregion of the third oxide semiconductor layer which is in contact withthe second insulating layer. To further reduce resistance, phosphorus,boron, or nitrogen may be added to the region of the third oxidesemiconductor layer which is in contact with the second insulating layerby an ion implantation method using the gate electrode layer as a mask.The third oxide semiconductor layer is preferably formed using a filmhaving a crystalline structure. The region of the third oxidesemiconductor layer which overlaps with the gate electrode layer has acrystalline structure and the region of the third oxide semiconductorlayer to which phosphorus, boron, or nitrogen is added by an ionimplantation method is a region having low crystallinity.

In the above structure, the third insulating layer may be provided as asidewall provided on a side surface of the gate electrode layer.

In the above structure, to prevent generation of a parasitic channel, ataper angle formed by an end surface of the first oxide semiconductorlayer and a surface of the first insulating layer is preferably greaterthan or equal to 10° and less than or equal to 60°. A taper angle formedby an end surface of the second oxide semiconductor layer and thesurface of the first insulating layer is preferably greater than orequal to 10° and less than or equal to 60°. A taper angle formed by anend surface of the third oxide semiconductor layer and the surface ofthe first insulating layer is preferably greater than or equal to 10°and less than or equal to 60°.

In the above structure, the side surface of the second oxidesemiconductor layer may be covered with the third oxide semiconductorlayer. The structure in which the side surface of the second oxidesemiconductor layer is not in direct contact with the source electrodelayer or the drain electrode layer can lead to a reduction in leakagecurrent.

In the case of a dual-gate transistor in which gate electrode layers areprovided over and below the oxide semiconductor layers, the first gateelectrode layer is provided between the insulating surface and the firstinsulating layer, and the second gate electrode layer is provided overthe second insulating layer.

Each of the oxide semiconductor layers is deposited under the followingconditions: a sputtering target which is polycrystalline and whoserelative density (filling rate) is high is used; the sputtering targetin deposition is sufficiently cooled to a room temperature; thetemperature of a surface where the oxide semiconductor layer is to bedeposited of a substrate where the oxide semiconductor layer is to bedeposited (a deposition-target substrate) is increased to a roomtemperature or higher; and an atmosphere in a deposition chamber hardlycontains moisture or hydrogen.

The higher density of the sputtering target is more preferable. When thedensity of the sputtering target is increased, the density of a film tobe deposited can also be increased. Specifically, the relative density(filling rate) of the sputtering target is higher than or equal to 90%and lower than or equal to 100%, preferably higher than or equal to 95%,more preferably higher than or equal to 99.9%. Note that the relativedensity of the sputtering target refers to a ratio between the densityof the sputtering target and the density of a material free of porosityhaving the same composition as the sputtering target.

The sputtering target is preferably sintered in an inert gas atmosphere(a nitrogen or rare gas atmosphere), in vacuum, or in a high-pressureatmosphere. As a sintering method, an atmospheric sintering method, apressure sintering method, or the like is used as appropriate. Apolycrystalline target obtained by any of these methods is used as asputtering target. As the pressure sintering method, a hot pressingmethod, a hot isostatic pressing (HIP) method, a discharge plasmasintering method, or an impact method is preferably used. Although themaximum temperature at which sintering is performed is selecteddepending on the sintering temperature of the sputtering targetmaterial, it is preferably set to approximately 1000° C. to 2000° C., ormore preferably, 1200° C. to 1500° C. Although the holding time of themaximum temperature is selected depending on the sputtering targetmaterial, 0.5 hours to 3 hours is preferable.

In the case where an In—Ga—Zn-base oxide film is deposited, a sputteringtarget having any of atomic ratios of In:Ga:Zn=3:1:2, In:Ga:Zn=1:1:1,and In:Ga:Zn=1:3:2 is used as the sputtering target.

Reduction of impurities remaining in the deposition chamber is alsoimportant for forming a dense film. The back pressure (ultimate vacuum:degree of vacuum before introducing a reaction gas) in a depositionchamber is set to be lower than or equal to 5×10⁻³ Pa, preferably 6×10⁻⁵Pa, and pressure in deposition is set to be lower than 2 Pa, preferablylower than or equal to 0.4 Pa. When the back pressure is set to be low,impurities in the deposition chamber are reduced.

Reduction of impurities in a gas to be introduced in the depositionchamber, i.e., a gas to be used in deposition, is also important forforming a dense film. Further, it is important to increase theproportion of oxygen contained in a deposition gas and optimize power.By increasing the proportion of oxygen (the upper limit: 100% oxygen)contained in the deposition gas and optimizing the power, plasma damagein deposition can be alleviated. Thus, a dense film is easily formed.

Deposition of the oxide semiconductor film is preferably performed whilea quadrupole mass analyzer (hereinafter also referred to as Q-mass) isoperated continuously in order that the amount of moisture in thedeposition chamber, or the like is monitored by the Q-mass before or indeposition.

The oxide semiconductor film is in a single crystal state, apolycrystalline (also referred to as polycrystal) state, an amorphousstate, or the like.

When the temperature of a deposition-target substrate, which is anexample of deposition conditions, is set to be higher than or equal to200° C., a dense oxide semiconductor film including a crystal part,i.e., a c-axis aligned crystalline oxide semiconductor (CAAC-OS) filmcan be obtained.

First, the CAAC-OS film is described.

The CAAC-OS film is one of oxide semiconductor films including aplurality of crystal parts, and most of each crystal part fits inside acube whose one side is less than 100 nm. Thus, there is a case where acrystal part included in the CAAC-OS film fits a cube whose one side isless than 10 nm, less than 5 nm, or less than 3 nm.

In a transmission electron microscope (TEM) image of the CAAC-OS film, aboundary between crystal parts, that is, a grain boundary is not clearlyobserved. Thus, in the CAAC-OS film, a reduction in electron mobilitydue to the grain boundary is less likely to occur.

According to the TEM image of the crystal parts included in the CAAC-OSfilm observed in a direction substantially parallel to a sample surface(cross-sectional TEM image), metal atoms are arranged in a layeredmanner in the crystal parts. Each metal atom layer has a morphologyreflected by a surface over which the CAAC-OS film is formed(hereinafter, a surface over which the CAAC-OS film is formed isreferred to as a formation surface) or a top surface of the CAAC-OSfilm, and is arranged in parallel to the formation surface or the topsurface of the CAAC-OS film.

On the other hand, according to the TEM image of the CAAC-OS filmobserved in a direction substantially perpendicular to the samplesurface (plan TEM image), metal atoms are arranged in a triangular orhexagonal configuration in the crystal parts. However, there is noregularity of arrangement of metal atoms between different crystalparts.

From the results of the cross-sectional TEM image and the plan TEMimage, alignment is found in the crystal parts in the CAAC-OS film.

A CAAC-OS film is subjected to structural analysis with an X-raydiffraction (XRD) apparatus. For example, when the CAAC-OS filmincluding an InGaZnO₄ crystal is analyzed by an out-of-plane method, apeak appears frequently when the diffraction angle (2θ) is around 31°.This peak is derived from the (009) plane of the InGaZnO₄ crystal, whichindicates that crystals in the CAAC-OS film have c-axis alignment, andthat the c-axes are aligned in a direction substantially perpendicularto the formation surface or the top surface of the CAAC-OS film.

On the other hand, when the CAAC-OS film is analyzed by an in-planemethod in which an X-ray enters a sample in a direction perpendicular tothe c-axis, a peak appears frequently when 2θ is around 56°. This peakis derived from the (110) plane of the InGaZnO₄ crystal. Here, analysis(φ scan) is performed under conditions where the sample is rotatedaround a normal vector of a sample surface as an axis (φ axis) with 2θfixed at around 56°. In the case where the sample is a single-crystaloxide semiconductor film of InGaZnO₄, six peaks appear. The six peaksare derived from crystal planes equivalent to the (110) plane. On theother hand, in the case of a CAAC-OS film, a peak is not clearlyobserved even when φ scan is performed with 2θ fixed at around 56°.

According to the above results, in the CAAC-OS film having c-axisalignment, while the directions of a-axes and b-axes are differentbetween crystal parts, the c-axes are aligned in a direction parallel toa normal vector of a formation surface or a normal vector of a topsurface. Thus, each metal atom layer arranged in a layered mannerobserved in the cross-sectional TEM image corresponds to a planeparallel to the a-b plane of the crystal.

Note that the crystal part is formed concurrently with deposition of theCAAC-OS film or is formed through crystallization treatment such as heattreatment. As described above, the c-axis of the crystal is aligned in adirection parallel to a normal vector of a formation surface or a normalvector of a top surface of the CAAC-OS film. Thus, for example, in thecase where a shape of the CAAC-OS film is changed by etching or thelike, the c-axis might not be necessarily parallel to a normal vector ofa formation surface or a normal vector of a top surface of the CAAC-OSfilm.

In this specification, a term “parallel” indicates that the angle formedbetween two straight lines is greater than or equal to −10° and lessthan or equal to 10°, and accordingly also includes the case where theangle is greater than or equal to −5° and less than or equal to 5°. Inaddition, a term “perpendicular” indicates that the angle formed betweentwo straight lines is greater than or equal to 80° and less than orequal to 100°, and accordingly includes the case where the angle isgreater than or equal to 85° and less than or equal to 95°.

Further, the degree of crystallinity in the CAAC-OS film is notnecessarily uniform. For example, in the case where crystal growthleading to the CAAC-OS film occurs from the vicinity of the top surfaceof the film, the degree of the crystallinity in the vicinity of the topsurface is higher than that in the vicinity of the formation surface insome cases. Further, when an impurity is added to the CAAC-OS film, thecrystallinity in a region to which the impurity is added is changed, andthe degree of crystallinity in the CAAC-OS film varies depends onregions.

Note that when the CAAC-OS film with an InGaZnO₄ crystal is analyzed byan out-of-plane method, a peak of 2θ may also be observed at around 36°,in addition to the peak of 2θ at around 31°. The peak of 2θ at around36° is derived from the (311) plane of a ZnGa₂O₄ crystal; such a peakindicates that a ZnGa₂O₄ crystal is included in part of the CAAC-OS filmincluding the InGaZnO₄ crystal. It is preferable that in the CAAC-OSfilm, a peak of 2θ appear at around 31° and a peak of 2θ do not appearat around 36°.

The CAAC-OS film is an oxide semiconductor film having a low impurityconcentration. The impurity is any of elements which are not the maincomponents of the oxide semiconductor film and includes hydrogen,carbon, silicon, a transition metal element, and the like. Inparticular, an element (e.g., silicon) which has higher bonding strengthwith oxygen than a metal element included in the oxide semiconductorfilm causes disorder of atomic arrangement in the oxide semiconductorfilm because the element deprives the oxide semiconductor film ofoxygen, thereby reducing crystallinity. Further, a heavy metal such asiron or nickel, argon, carbon dioxide, and the like have a large atomicradius (or molecular radius); therefore, when any of such elements iscontained in the oxide semiconductor film, the element causes disorderof the atomic arrangement of the oxide semiconductor film, therebyreducing crystallinity. Note that the impurity contained in the oxidesemiconductor film might become a carrier trap or a source of carriers.

The CAAC-OS film is an oxide semiconductor film having a low density ofdefect states. For example, oxygen vacancies in the oxide semiconductorfilm serve as carrier traps or serve as carrier generation sources whenhydrogen is captured therein.

The state in which impurity concentration is low and density of defectstates is low (the number of oxygen vacancies is small) is referred toas “highly purified intrinsic” or “substantially highly purifiedintrinsic”. A highly purified intrinsic or substantially highly purifiedintrinsic oxide semiconductor film has few carrier generation sources,and thus has a low carrier density in some cases. Thus, in some cases, atransistor including the oxide semiconductor film in a channel formationregion rarely has a negative threshold voltage (is rarely normally-on).A highly purified intrinsic or substantially highly purified intrinsicoxide semiconductor film has few carrier traps. Accordingly, thetransistor including the oxide semiconductor film has little variationin electrical characteristics and high reliability. A charge trapped bythe carrier traps in the oxide semiconductor film takes a long time tobe released. The trapped charge may behave like a fixed charge. Thus,the transistor including the oxide semiconductor film with a highimpurity concentration and a high density of defect states has unstableelectrical characteristics in some cases.

Since the c-axes of the crystal parts included in the CAAC-OS film arealigned in the direction parallel to a normal vector of a surface wherethe CAAC-OS film is formed or a normal vector of a surface of theCAAC-OS film, the directions of the c-axes may be different from eachother depending on the shape of the CAAC-OS film (the cross-sectionalshape of the surface where the CAAC-OS film is formed or thecross-sectional shape of the surface of the CAAC-OS film). Note thatwhen the CAAC-OS film is formed, the direction of c-axis of the crystalpart is the direction parallel to a normal vector of the surface wherethe CAAC-OS film is formed or a normal vector of the surface of theCAAC-OS film. The crystal part is formed by deposition using asputtering target or by performing treatment for crystallization such asheat treatment after deposition.

During deposition, fine sputtering particles fly from a sputteringtarget, and a film is formed so that the sputtering particles adhereonto the deposition-target substrate. When the temperature of thesubstrate is higher than or equal to 200° C., the sputtering particlesare rearranged because the substrate is heated. Thus, a dense film isformed.

A phenomenon in the deposition is described in detail using FIGS. 12A to12C, FIGS. 13A and 13B, and FIGS. 14A to 14C.

When ions collide with the surface of the sputtering target, the crystalregion included in the sputtering target is cleaved along an a-b plane,and sputtered particles whose top and bottom surfaces are each alignedwith a layer parallel to the a-b plane (flat-plate-like sputteredparticle or pellet-like sputtered particle) are separated from thesputtering target. Assuming that the crystalline particle which issputtered from a surface of a sputtering target 2002 and released hasc-axis alignment and is a flat-plate-like sputtered particle 2001 asillustrated in FIG. 12A, a schematic model diagram in FIG. 12B can beobtained. The flat-plate-like sputtered particle is preferably in astate illustrated in FIG. 12C, i.e., is preferably the one with anoutermost surface of a (Ga or Zn)O plane.

When the oxygen flow rate is high and the pressure in a chamber 2003 ishigh during deposition, as illustrated in FIG. 13A, oxygen ions areattached onto the flat-plate-like sputtered particle and the sputteredparticle can have a large amount of oxygen on its surface. Anotherflat-plate-like sputtered particle is stacked thereover before theattached oxygen is released; therefore, as illustrated in FIG. 14C, alarge amount of oxygen can be contained in the film. The oxygen adsorbedon the surface contributes to a reduction in the number of oxygenvacancies in the oxide semiconductor film.

To form an oxide semiconductor film having a crystalline region withc-axis alignment, it is preferable to increase the substrate temperatureat the deposition. However, when the substrate temperature is higherthan 350° C., the oxygen adsorbed on the surface might be released asillustrated in FIG. 13B. Therefore, when the substrate temperature isset to higher than or equal to 150° C. and lower than or equal to 350°C. and preferably higher than or equal to 160° C. and lower than orequal to 230° C. and only an oxygen gas is used as a deposition gas, anoxide semiconductor film having a crystalline region with c-axisalignment, i.e., a CAAC-OS film, can be obtained.

FIG. 14A is a model of a process in the deposition, in which oneflat-plate-like sputtered particle reaches a surface of a substrate 2000to be stabilized. As illustrated in FIG. 14A, the flat-plate-likesputtered particle reaches the substrate surface while keeping itscrystalline state, whereby formation of a CAAC-OS film is facilitated.Further, when flat-plate-like sputtered particles are stacked asillustrated in FIG. 14B, formation of a CAAC-OS film is facilitated.Note that the CAAC-OS film is a film which contains a large amount ofoxygen and has a reduced number of oxygen vacancies as illustrated inFIG. 14C.

In the CAAC-OS film over the substrate 2000, a series of about 2 to 20indium atoms exist in a lateral direction to form a layer includingindium atoms. Note that in some cases, the layer has a series of 20 ormore indium atoms; for example, the layer may have a series of 2 to 50indium atoms, 2 to 100 indium atoms, or 2 to 500 indium atoms in alateral direction.

Layers including indium atoms overlap with each other. The number oflayers is greater than or equal to 1 and less than or equal to 20,greater than or equal to 1 and less than or equal to 10, or greater thanor equal to 1 and less than or equal to 4.

As described above, a stack of the layers including indium atoms oftenappears to be a cluster including several indium atoms in a lateraldirection and several layers in a longitudinal direction. This isbecause each of the sputtering particles has a flat-plate-like shape.

By increasing the temperature of the deposition-target substrate,migration of sputtering particles is likely to occur on a substratesurface. With this effect, a flat-plate-like sputtered particle reachesthe substrate surface, moves slightly, and then is attached to thesubstrate surface with a flat plane (a-b plane) of the sputteredparticle facing toward the substrate surface. Therefore, an oxidesemiconductor film having a crystal region which is c-axis-alignedperpendicularly to the surface of the oxide semiconductor film is easilyformed.

Further, heat treatment at a temperature of higher than or equal to 200°C. may be performed after the deposition of the oxide semiconductorfilm, so that a denser film is obtained. However, in that case, oxygenvacancies might be generated when impurity elements (e.g., hydrogen andwater) in the oxide semiconductor film are reduced. Therefore, beforethe heat treatment is performed, an insulating layer containing excessoxygen is preferably provided over or below the oxide semiconductorfilm, in which case oxygen vacancies in the oxide semiconductor film canbe reduced by the heat treatment.

An oxide semiconductor film shortly after deposition is made dense;thus, a dense film which is thin and close to single crystal can beobtained. Since oxygen, hydrogen, or the like hardly diffuses within thefilm, a semiconductor device including a dense oxide semiconductor filmcan achieve improvement in reliability.

It is preferable that a CAAC-OS film be used for at least the secondoxide semiconductor layer and the channel formation region overlappingwith the gate electrode layer be formed with the CAAC-OS film. In thecase where a CAAC-OS film is used for the first oxide semiconductorlayer, since the first oxide semiconductor layer has the same crystalstructure as the second oxide semiconductor layer, the number of levelscan be small at the interface thereof, so that high field-effectmobility can be achieved. Further, it is preferable that the secondoxide semiconductor layer be formed on and in contact with the firstoxide semiconductor layer that is a CAAC-OS film because the secondoxide semiconductor layer formed over the first oxide semiconductorlayer is easily crystallized using the first oxide semiconductor layeras a crystal seed, so that the first and second oxide semiconductorlayers can have the same crystal structure.

A transistor having high field-effect mobility can be obtained.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A to 1D are schematic views illustrating one embodiment of thepresent invention.

FIGS. 2A to 2D are cross-sectional views illustrating manufacturingsteps of one embodiment of the present invention.

FIGS. 3A and 3B are a cross-sectional view and a top view illustratingone embodiment of the present invention.

FIGS. 4A to 4C are cross-sectional views and a top view illustrating oneembodiment of the present invention.

FIGS. 5A and 5B are a cross-sectional view and a circuit diagramillustrating one embodiment of a semiconductor device.

FIGS. 6A to 6C are a cross-sectional view and circuit diagramsillustrating one embodiment of a semiconductor device.

FIG. 7 is a circuit diagram illustrating one embodiment of asemiconductor device.

FIG. 8 is a perspective view illustrating one embodiment of asemiconductor device.

FIGS. 9A to 9C are block diagrams illustrating one embodiment of asemiconductor device.

FIGS. 10A to 10C illustrate an electronic appliance.

FIGS. 11A to 11C illustrate electronic appliances.

FIG. 12A is a schematic view of a flat-plate-like sputtered particle,FIG. 12B is a model diagram in deposition, and FIG. 12C is a modeldiagram showing the state of the flat-plate-like sputtered particle.

FIG. 13A is a model diagram in deposition and FIG. 13B is a modeldiagram showing the state where oxygen of a flat-plate-like sputteredparticle is released.

FIGS. 14A and 14B are model diagrams in deposition and FIG. 14C is amodel diagram showing the state of flat-plate-like sputtered particles.

FIG. 15 is a top view illustrating an example of an apparatus formanufacturing a semiconductor device.

FIGS. 16A to 16C are a top view, a cross-sectional view, and a schematicview illustrating one embodiment of the present invention.

FIGS. 17A to 17C are schematic views each illustrating one embodiment ofthe present invention.

FIGS. 18A to 18D are cross-sectional views illustrating manufacturingsteps of one embodiment of the present invention.

FIGS. 19A to 19D are cross-sectional views illustrating manufacturingsteps of one embodiment of the present invention.

FIGS. 20A to 20E are top views and cross-sectional views illustratingone embodiment of the present invention.

FIGS. 21A and 21B are cross-sectional views each illustrating oneembodiment of the present invention.

FIGS. 22A and 22B are a cross-sectional view and a circuit diagramillustrating one embodiment of a semiconductor device.

FIGS. 23A to 23C are a cross-sectional view and circuit diagramsillustrating one embodiment of a semiconductor device.

DETAILED DESCRIPTION OF THE INVENTION

Hereinafter, embodiments of the present invention will be described indetail with reference to the accompanying drawings. However, the presentinvention is not limited to the description below, and it is easilyunderstood by those skilled in the art that modes and details disclosedherein can be modified in various ways without departing from the spiritand the scope of the present invention. Therefore, the present inventionis not construed as being limited to description of the embodiments.

Embodiment 1

In this embodiment, one embodiment of a semiconductor device and oneembodiment of a method for manufacturing the semiconductor device willbe described with reference to FIGS. 2A to 2D. In this embodiment, anexample of a method for manufacturing a transistor including an oxidesemiconductor film is described.

First, an insulating film 433 is formed over a substrate 400 having aninsulating surface and a conductive film is formed thereover by asputtering method, an evaporation method, or the like. The conductivefilm is etched so that a conductive layer 491 and wiring layers 434 and436 are formed.

There is no particular limitation on a substrate that can be used as thesubstrate 400 having an insulating surface as long as it has heatresistance enough to withstand heat treatment performed later. Forexample, a glass substrate of barium borosilicate glass,aluminoborosilicate glass, or the like, a ceramic substrate, a quartzsubstrate, or a sapphire substrate can be used. A single crystalsemiconductor substrate or a polycrystalline semiconductor substrate ofsilicon, silicon carbide, or the like; a compound semiconductorsubstrate of silicon germanium or the like; an SOI substrate; or thelike can be used as the substrate 400, or the substrate provided with asemiconductor element can be used as the substrate 400.

For example, the insulating film 433 can be formed using one or moreinsulating films selected from the following: an oxide insulating filmof silicon oxide, gallium oxide, hafnium oxide, yttrium oxide, aluminumoxide, or the like; a nitride insulating film of silicon nitride,aluminum nitride, or the like; an oxynitride insulating film of siliconoxynitride, aluminum oxynitride, or the like; or a nitride oxideinsulating film of silicon nitride oxide or the like. Note that “siliconnitride oxide” refers to the one that contains more nitrogen than oxygenand “silicon oxynitride” refers to the one that contains more oxygenthan nitrogen. Here, for example, silicon oxynitride refers to the onethat contains oxygen, nitrogen, and silicon at concentrations rangingfrom 50 atomic % to 70 atomic %, 0.5 atomic % to 15 atomic %, and 25atomic % to 35 atomic %, respectively. In the case where a substratewhich is provided with a semiconductor element is used, a siliconnitride film which is deposited by a plasma chemical vapor deposition(CVD) method using a mixed gas of silane (SiH₄) and nitrogen (N₂) as asupply gas is preferably used as the insulating film 433. This siliconnitride film also functions as a barrier film and prevents hydrogen or ahydrogen compound from entering an oxide semiconductor layer to beformed later, thereby improving the reliability of the semiconductordevice. A silicon nitride film deposited by a plasma CVD method using amixed gas of silane (SiH₄), nitrogen (N₂), and ammonia (NH₃) as a supplygas includes fewer defects than the silicon nitride film deposited usinga mixed gas of silane (SiH₄) and nitrogen (N₂) as a supply gas. When thesilicon nitride film deposited using a mixed gas of silane (SiH₄),nitrogen (N₂), and ammonia (NH₃) is formed to a thickness greater thanor equal to 300 nm and less than or equal to 400 nm, an ESD resistancecan be 300 V or higher. Therefore, when a stack in which a siliconnitride film which is deposited using a mixed gas of silane (SiH₄) andnitrogen (N₂) as a supply gas is stacked over the silicon nitride filmwhich is deposited to a thickness greater than or equal to 300 nm andless than or equal to 400 nm using a mixed gas of silane (SiH₄),nitrogen (N₂), and ammonia (NH₃) is used as the insulating film 433, abarrier film having a high ESD resistance can be achieved.

The conductive layer 491 and the wiring layers 434 and 436 can be formedusing a metal material such as molybdenum, titanium, tantalum, tungsten,aluminum, copper, chromium, neodymium, or scandium or an alloy materialwhich contains any of these materials as its main component.Alternatively, a semiconductor film typified by a polycrystallinesilicon film doped with an impurity element such as phosphorus, or asilicide film such as a nickel silicide film may be used as theconductive layer 491 and the wiring layers 434 and 436. The conductivelayer 491 and the wiring layers 434 and 436 may have a single-layerstructure or a stacked-layer structure.

The conductive layer 491 and the wiring layers 434 and 436 can also beformed using a conductive material such as indium oxide-tin oxide,indium oxide containing tungsten oxide, indium zinc oxide containingtungsten oxide, indium oxide containing titanium oxide, indium tin oxidecontaining titanium oxide, indium oxide-zinc oxide, or indium tin oxideto which silicon oxide is added. It is also possible that the conductivelayer 491 and the wiring layers 434 and 436 have a stacked structure ofthe above conductive material and the above metal material.

In order to obtain a normally-off switching element, it is preferablethat the threshold voltage of the transistor is made positive by using amaterial having a work function of 5 eV (electron volts) or higher,preferably 5.5 eV or higher, for a gate electrode layer. Specifically, amaterial which includes an In—N bond and has a specific resistivity of1×10⁻¹ Ω·cm to 1×10⁻⁴ Ω·cm, preferably 5×10⁻² Ω·cm to 1×10⁻⁴ Ω·cm, isused for the gate electrode layer. Examples of the material are anIn—Ga—Zn-based oxide film containing nitrogen, an In—Sn—O filmcontaining nitrogen, an In—Ga—O film containing nitrogen, an In—Zn—Ofilm containing nitrogen, an In—O film containing nitrogen, and a metalnitride film (e.g., an InN film).

Next, an oxide insulating film is formed over the conductive layer 491and the wiring layers 434 and 436. The oxide insulating film has aprojecting portion reflecting the shape of the conductive layer 491 onits surface.

The oxide insulating film can be formed by a plasma CVD method, asputtering method, or the like using any of silicon oxide, siliconoxynitride, aluminum oxide, aluminum oxynitride, hafnium oxide, galliumoxide, gallium oxide zinc, and zinc oxide, or a mixed material thereof.The oxide insulating film may have either a single-layer structure or astacked-layer structure.

Then, polishing treatment (e.g., chemical mechanical polishing (CMP)) isperformed, whereby an oxide insulating film 435 which is planarized isformed and top surfaces of the wiring layers 434 and 436 and a topsurface of the conductive layer 491 are exposed. After the CMPtreatment, cleaning is performed and heat treatment for removingmoisture attached on the substrate is performed. A cross-sectional viewof a structure obtained after this step corresponds to FIG. 2A.

After the planarization and the heat treatment, an insulating film 437and a stack 403 of oxide semiconductor films are formed. Across-sectional view of a structure obtained after this step correspondsto FIG. 2B.

Then, patterning is performed using one mask and the insulating film 437and the stack 403 of oxide semiconductor films are selectively etched. Across-sectional view of a structure obtained after this step correspondsto FIG. 2C. It is preferable that the insulating film 437 and the stack403 of oxide semiconductor films be formed successively without beingexposed to the air because interfaces of the films can be prevented frombeing contaminated by an impurity.

The insulating film 437 is formed by a plasma CVD method or a sputteringmethod. In the case where a plasma CVD method is used, it isparticularly preferable to use a plasma CVD method in which plasma isgenerated utilizing electric-field energy of a microwave and a sourcegas for the insulating film is excited by the plasma, and the excitedsource gas is reacted on a surface of an object to deposit a reactant(also referred to as a microwave plasma CVD method). The insulating filmformed by a plasma CVD method using a microwave is a dense film, andtherefore, the insulating film 437 obtained by processing the insulatingfilm is also a dense film. The insulating film 437 has a thicknessgreater than or equal to 5 nm and less than or equal to 300 nm.

The insulating film 437 can be formed using a single layer or a stack oflayers selected from the following films: an oxide insulating film ofsilicon oxide, gallium oxide, hafnium oxide, yttrium oxide, aluminumoxide, or the like; an oxynitride insulating film of silicon oxynitride,aluminum oxynitride, or the like; or a nitride oxide insulating film ofsilicon nitride oxide or the like.

In this embodiment, the stack 403 of oxide semiconductor films has athree-layer structure in which the first oxide semiconductor film 403 a,the second oxide semiconductor film 403 b, and the third oxidesemiconductor film 403 c are stacked in this order, as illustrated inFIG. 2C.

For each of the oxide semiconductor films, a two-component metal oxidesuch as an In—Mg-based oxide or an In—Ga-based oxide, a three-componentmetal oxide such as an In—Ga—Zn-based oxide (also referred to as IGZO),an In—Sn—Zn-based oxide, an In—Hf—Zn-based oxide, an In—La—Zn-basedoxide, an In—Ce—Zn-based oxide, an In—Pr—Zn-based oxide, anIn—Nd—Zn-based oxide, an In—Sm—Zn-based oxide, an In—Eu—Zn-based oxide,an In—Gd—Zn-based oxide, an In—Tb—Zn-based oxide, an In—Dy—Zn-basedoxide, an In—Ho—Zn-based oxide, an In—Er—Zn-based oxide, anIn—Tm—Zn-based oxide, an In—Yb—Zn-based oxide, or an In—Lu—Zn-basedoxide; or a four-component metal oxide such as an In—Sn—Ga—Zn-basedoxide, an In—Hf—Ga—Zn-based oxide, or an In—Sn—Hf—Zn-based oxide can beused.

As the first oxide semiconductor film 403 a, a material film which canbe represented as M1_(a)M2_(b)M3_(c)O_(x) (a is a real number greaterthan or equal to 0 and less than or equal to 2, b is a real numbergreater than 0 and less than or equal to 5, c is a real number greaterthan or equal to 0 and less than or equal to 5, and x is an arbitraryreal number) is used. In this embodiment, an In—Ga—Zn-based oxide filmwhich is deposited using a sputtering target having an atomic ratio ofIn:Ga:Zn=1:1:1 and has a thickness greater than or equal to 5 nm andless than or equal to 15 nm is used. Further, the first oxidesemiconductor film 403 a may have an amorphous structure but ispreferably a CAAC-OS film. Note that the first oxide semiconductor film403 a can be referred to as a first I-type oxide semiconductor layer.

As the second oxide semiconductor film 403 b, a material film which canbe represented as M4_(d)M5_(e)M6_(f)O_(x) (d is a real number greaterthan 0 and less than or equal to 5, e is a real number greater than orequal to 0 and less than or equal to 3, f is a real number greater than0 and less than or equal to 5, and x is an arbitrary positive number) isused. In this embodiment, an In—Ga—Zn-based oxide film is deposited to athickness greater than or equal to 5 nm and less than or equal to 30 nmby a sputtering method using a sputtering target having an atomic ratioof In:Ga:Zn=3:1:2 in a mixed atmosphere containing oxygen and nitrogenor a mixed atmosphere containing a rare gas, oxygen, and nitrogen.Further, it is preferable that the second oxide semiconductor film 403 bbe a CAAC-OS film. Note that the second oxide semiconductor film 403 bcan be referred to as an N-type oxide semiconductor layer.

As the third oxide semiconductor film 403 c, a material film which canbe represented as M7_(g)M8_(h)M9_(j)O_(x) (g is a real number greaterthan or equal to 0 and less than or equal to 2, h is a real numbergreater than 0 and less than or equal to 5, i is a real number greaterthan or equal to 0 and less than or equal to 5, and x is an arbitraryreal number) is used. In this embodiment, an In—Ga—Zn-based oxidesemiconductor film which is deposited by a sputtering method using asputtering target having an atomic ratio of In:Ga:Zn=1:3:2 and has athickness greater than or equal to 5 nm and less than or equal to 30 nmis used. Note that the third oxide semiconductor film 403 c can bereferred to as a second I-type oxide semiconductor layer. Further, thethird oxide semiconductor film 403 c may have an amorphous structure butis preferably a CAAC-OS film. The third oxide semiconductor film 403 cis in contact with a source electrode layer and a drain electrode layer,whereby the threshold voltage is determined.

With such a stacked-layer structure, a structure in which the secondoxide semiconductor film 403 b through which carriers flow is not incontact with the insulating film containing silicon is obtained.

Polycrystalline targets are used as the sputtering targets for formingthe first oxide semiconductor film 403 a and the second oxidesemiconductor film 403 b so that the first oxide semiconductor film 403a and the second oxide semiconductor film 403 b are CAAC-OS films.Further, when a sputtering target having a composition which easilycauses crystallization is used for forming the first oxide semiconductorfilm 403 a, the second oxide semiconductor film 403 b in contact withthe first oxide semiconductor film 403 a can also be crystallized. Thenumber of levels at an interface between the first oxide semiconductorfilm 403 a and the second oxide semiconductor film 403 b is small, andthus high field-effect mobility can be achieved. It is preferable thatthe thicknesses and compositions are adjusted so that carriers flow onlythrough the second oxide semiconductor film 403 b.

When the insulating film 437 and the first oxide semiconductor film 403a are deposited successively without being exposed to the air, impuritycontamination of an interface between the insulating film 437 and thefirst oxide semiconductor film 403 a can be prevented; when the secondoxide semiconductor film 403 b and the third oxide semiconductor film403 c are deposited successively without being exposed to the air,impurity contamination of an interface between the second oxidesemiconductor film 403 b and the third oxide semiconductor film 403 ccan be prevented. The third oxide semiconductor film 403 c alsofunctions as a protective film that protects the second oxidesemiconductor film 403 b from exposure to the air in etching or the likein a later step.

In the case where steps for stacking the first oxide semiconductor film403 a, the second oxide semiconductor film 403 b, and the third oxidesemiconductor film 403 c in this order are performed successivelywithout exposure to the air, a manufacturing apparatus a top view ofwhich is illustrated in FIG. 15 may be used.

The manufacturing apparatus illustrated in FIG. 15 is single wafermulti-chamber equipment, which includes three sputtering devices 10 a,10 b, and 10 c, a substrate supply chamber 11 provided with threecassette ports 14 for holding a process substrate, load lock chambers 12a and 12 b, a transfer chamber 13, a substrate heating chamber 15, andthe like. Note that a transfer robot for transferring a substrate to betreated is provided in each of the substrate supply chamber 11 and thetransfer chamber 13. The atmospheres of the sputtering devices 10 a, 10b, and 10 c, the transfer chamber 13, and the substrate heating chamber15 are preferably controlled so as to hardly contain hydrogen andmoisture (i.e., as an inert atmosphere, a reduced pressure atmosphere,or a dry air atmosphere). For example, a preferable atmosphere is a drynitrogen atmosphere in which the dew point of moisture is −40° C. orlower, preferably −50° C. or lower. An example of a procedure of themanufacturing steps with use of the manufacturing apparatus illustratedin FIG. 15 is as follows. The process substrate is transferred from thesubstrate supply chamber 11 to the substrate heating chamber 15 throughthe load lock chamber 12 a and the transfer chamber 13; moistureattached to the process substrate is removed by vacuum baking in thesubstrate heating chamber 15; the process substrate is transferred tothe sputtering device 10 c through the transfer chamber 13; and thefirst oxide semiconductor film 403 a is deposited in the sputteringdevice 10 c. Then, the process substrate is transferred to thesputtering device 10 a through the transfer chamber 13 without exposureto air, and the second oxide semiconductor film 403 b is deposited inthe sputtering device 10 a. Then, the process substrate is transferredto the sputtering device 10 b through the transfer chamber 13, and thethird oxide semiconductor film 403 c is deposited in the sputteringdevice 10 b. If needed, the process substrate is transferred to thesubstrate heating chamber 15 through the transfer chamber 13 withoutexposure to air and heat treatment is performed. As described above,with use of the manufacturing apparatus illustrated in FIG. 15, amanufacturing process can proceed without exposure to air. Further, withof the sputtering devices in the manufacturing apparatus in FIG. 15, aprocess performed without exposure to the air can be achieved by changeof the sputtering target. As the sputtering devices in the manufacturingapparatus in FIG. 15, a parallel plate sputtering device, an ion beamsputtering device, a facing-target sputtering device, or the like may beused. In a facing-target type sputtering device, an object surface isseparated from plasma and thus damage in deposition is small; therefore,a CAAC-OS film having high crystallinity can be formed.

In order that the second oxide semiconductor film 403 b through whichcarriers flow is not in contact with the insulating film containingsilicon, top and bottom interfaces of the second oxide semiconductorfilm 403 b are protected with the first oxide semiconductor film 403 aand third oxide semiconductor film 403 c so that an impurity such assilicon does not enter the second oxide semiconductor film 403 b and theinterfaces thereof; accordingly, high field-effect mobility is achieved.

After the insulating film 437 and the stack 403 of oxide semiconductorfilms are formed, a conductive film is formed. This conductive film isselectively etched, so that electrode layers 445 a and 445 b and aconductive layer 442 are formed. A cross-sectional view of a structureobtained after this step corresponds to FIG. 2D. By performing etchingplural times at this time, electrodes which have projecting regions intheir bottom edge portions when seen in cross-section are formed. Theelectrode layers 445 a and 445 b having the projecting regions in thebottom edge portions function as a source electrode layer and a drainelectrode layer of the transistor. The electrode layer 445 a is providedon and in contact with the wiring layer 436 and the electrode layer 445b is provided on and in contact with the wiring layer 434.

A distance between the electrode layers 445 a and 445 b corresponds to achannel length L of the transistor. In order that the channel length Lof the transistor is less than 50 nm, for example, approximately 20 nm,it is preferable that a resist be subjected to light exposure using anelectron beam and the developed mask be preferably used as an etchingmask of the conductive film. At a higher acceleration voltage, anelectron beam can provide a more precise pattern. The use of multipleelectron beams can shorten the process time per substrate. In anelectron beam writing apparatus capable of electron beam irradiation,the acceleration voltage is preferably in the range from 5 kV to 50 kV,for example. The current intensity is preferably in the range from5×10⁻¹² A to 1×10⁻¹¹ A. The minimum beam size is preferably 2 nm orless. The minimum possible pattern line width is preferably 8 nm orless. Under the above conditions, a pattern with a width of, forexample, 30 nm or less, preferably 20 nm or less, more preferably 8 nmor less, can be obtained.

The insulating film 402 is provided over the electrode layers 445 a and445 b and the conductive layer 442 and also provided over the stack 403of oxide semiconductor films. A material of the insulating film 402 canbe a silicon oxide film, a gallium oxide film, a gallium oxide zincfilm, a Ga₂O₃ (Gd₂O₃) film, a zinc oxide film, an aluminum oxide film, asilicon nitride film, a silicon oxynitride film, an aluminum oxynitridefilm, or a silicon nitride oxide film. As another material of theinsulating film 402, an In—Ga—Zn-based oxide film having an insulatingproperty can be given. The In—Ga—Zn-based oxide film having aninsulating property may be formed under the following conditions: asputtering target having an atomic ratio of In:Ga:Zn=1:3:2 is used, thesubstrate temperature is room temperature, and an argon gas or a mixedgas of argon and oxygen are used as sputtering gases.

It is preferable that the insulating film 402 include a regioncontaining oxygen in a proportion higher than that of the stoichiometriccomposition (an oxygen-excess region). This is because, when aninsulating layer in contact with the stack 403 of oxide semiconductorfilms includes an oxygen-excess region, oxygen can be supplied to thestack 403 of oxide semiconductor films, release of oxygen from the stack403 of oxide semiconductor films can be prevented, and oxygen vacanciescan be filled. In order to provide the oxygen-excess region in theinsulating film 402, the insulating film 402 is formed in an oxygenatmosphere, for example. Alternatively, oxygen may be introduced intothe deposited insulating film 402 to provide the oxygen-excess regiontherein. Further, as illustrated in FIG. 3A, the insulating film 402preferably has a stacked-layer structure of a first insulating film 402a and a second insulating film 402 b. The stacked-layer structure isformed in such a manner that, over an insulating film including a regioncontaining excess oxygen (oxygen-excess region), a silicon oxide film ora silicon oxynitride film is formed on a condition where a highfrequency power higher than or equal to 0.17 W/cm² and lower than orequal to 0.5 W/cm², preferably higher than or equal to 0.26 W/cm² andlower than or equal to 0.35 W/cm², is supplied. Specifically, thesilicon oxynitride film is formed in conditions where silane (SiH₄) anddinitrogen monoxide (N₂O) are supplied as source gases at 160 sccm and4000 sccm, respectively; the pressure of a treatment chamber is adjustedto 200 Pa; and a power of 1500 W is supplied with a high-frequency powersupply of 27.12 MHz. Further, the substrate temperature at which thesilicon oxynitride film is formed is set to 220° C.

Next, the insulating film 402 is selectively etched to form an openingreaching the conductive layer 442. After that, a conductive film isformed and selectively etched, whereby an electrode layer 438 which iselectrically connected to the conductive layer 442 is formed and a gateelectrode layer 401 is formed over the stack 403 of oxide semiconductorfilms with the insulating film 402 positioned therebetween. Then, aninsulating film 407 functioning as a barrier film is provided to coverthe gate electrode layer 401 and the electrode layer 438.

As the insulating film 407, it is preferable to use a silicon nitridefilm which is deposited by a plasma CVD method in which a mixed gas ofsilane (SiH₄) and nitrogen (N₂) is supplied. This silicon nitride filmfunctions as a barrier film and prevents hydrogen or a hydrogen compoundfrom entering an oxide semiconductor layer to be formed later, therebyimproving the reliability of the semiconductor device.

The gate electrode layer 401 and the electrode layer 438 can be formedusing a metal material such as molybdenum, titanium, tantalum, tungsten,aluminum, copper, chromium, neodymium, or scandium or an alloy materialwhich contains any of these materials as its main component. Asemiconductor film which is doped with an impurity element such asphosphorus and is typified by a polycrystalline silicon film, or asilicide film of nickel silicide or the like can also be used as thegate electrode layer 401 and the electrode layer 438. The gate electrodelayer 401 and the electrode layer 438 each have either a single-layerstructure or a stacked-layer structure.

In this embodiment, a tungsten film is used as the gate electrode layer401 on and in contact with the insulating film 402.

Through the above process, a transistor 415 of this embodiment can bemanufactured (see FIG. 3A). The transistor 415 is an example of adual-gate transistor. FIG. 3A is a cross-sectional view of thetransistor 415 in the channel length direction. In the dual-gatetransistor 415, the insulating film 437 serves as a first gateinsulating film and the insulating film 402 serves as a second gateinsulating film.

The conductive layer 491 can function as a second gate electrode layer(also referred to as back gate) for controlling the electricalcharacteristics of the transistor 415. For example, by setting thepotential of the conductive layer 491 to GND (or a fixed potential), thethreshold voltage of the transistor 415 is increased, so that thetransistor 415 can be normally off.

Further, when the conductive layer 491 and the insulating film 437 arenot provided, the top-gate transistor illustrated in FIG. 1A can bemanufactured. In the case where the transistor in FIG. 1A ismanufactured, the same process can be used except that the insulatingfilm 437 is not provided between the conductive layer 491 and the oxidesemiconductor stack and that a nitride insulating film 444 is providedbelow the oxide insulating film 435; therefore, detailed description isomitted there. Alternatively, when the layout is changed, a dual-gatetransistor and a top-gate transistor both can be manufactured over thesame substrate without change in the number of steps.

In the transistor 418 in FIG. 1A, the nitride insulating film 444, theoxide insulating film 435, the first oxide semiconductor film 403 a, thesecond oxide semiconductor film 403 b, the third oxide semiconductorfilm 403 c, the first insulating film 402 a, and the second insulatingfilm 402 b are stacked in this order over the substrate 400, and thesecond oxide semiconductor film 403 b is separated from the insulatingfilm containing silicon. Further, it is preferable that a siliconnitride film be used as the nitride insulating film 444 and a siliconnitride film be used as the second insulating film 402 b or a siliconnitride film be used as the insulating film 407. With such a structure,moisture and hydrogen can be prevented from entering the second oxidesemiconductor film 403 b from the outside; thus the reliability of thetransistor is improved.

FIG. 3B is an example of a top view of the transistor 415. FIG. 3A is across section taken along a chain line X-Y in FIG. 3B.

Embodiment 2

In this embodiment, a structural example in FIG. 4A which is partlydifferent from the structure of FIG. 1A and a manufacturing methodthereof are described below.

First, over the substrate 400, the oxide insulating film 435 is formed.The oxide insulating film 435 can be formed by a plasma CVD method, asputtering method, or the like, using silicon oxide, silicon oxynitride,aluminum oxide, aluminum oxynitride, hafnium oxide, gallium oxide,gallium oxide zinc, zinc oxide, or a mixed material of any of thesematerials. The oxide insulating film 435 may have either a single-layerstructure or a stacked-layer structure. If needed, a nitride insulatingfilm such as a silicon nitride film may be provided between thesubstrate 400 and the oxide insulating film 435.

Next, the first oxide semiconductor film 403 a and the second oxidesemiconductor film 403 b are formed by patterning using the same mask,and then the third oxide semiconductor film 403 c is formed. Since thethird oxide semiconductor film 403 c is formed using a different maskfrom the first and second oxide semiconductor films 403 a and 403 b, thethird oxide semiconductor film 403 c can cover the side surface of thefirst oxide semiconductor film 403 a and the side and top surfaces ofthe second oxide semiconductor film 403 b as illustrated in FIG. 4A.Note that in this embodiment, all of the first to third oxidesemiconductor layers have an amorphous structure. However, oneembodiment of the present invention is not limited thereto; it ispossible that all of the first to third oxide semiconductor layers areCAAC-OS films or at least one of the first to third oxide semiconductorlayers has an amorphous structure.

Subsequently, a conductive film is formed. This conductive film isselectively etched, so that the electrode layers 445 a and 445 b areformed.

Then, the insulating film 402 is provided over the electrode layers 445a and 445 b, and is also provided over the third oxide semiconductorfilm 403 c. As illustrated in FIG. 4B, since the side surface of thesecond oxide semiconductor film 403 b is covered with the third oxidesemiconductor film 403 c, the side surface of the second oxidesemiconductor film 403 b is not in contact with the insulating film 402.

Next, a conductive film is formed over the insulating film 402 andselectively etched to form the gate electrode layer 401 over the thirdoxide semiconductor film 403 c with the insulating film 402 positionedtherebetween. The insulating film 407 functioning as a barrier film isprovided so as to cover the gate electrode layer 401.

Through the above process, a transistor 416 illustrated in FIG. 4A canbe manufactured. FIG. 4C is a top view. A cross section taken along achain line B1-B2 in FIG. 4C corresponds to FIG. 4A and a cross sectiontaken along a dotted line B2-B3 in FIG. 4C corresponds to FIG. 4B. Asillustrated in FIG. 4C, the periphery of the third oxide semiconductorfilm 403 c is positioned outside the periphery of the second oxidesemiconductor film 403 b.

This embodiment can be freely combined with Embodiment 1. Portionsdenoted by the same reference numerals as those of the drawings used inEmbodiment 1 can be formed using the same material as those ofEmbodiment 1. Instead of the stack 403 of oxide semiconductor filmsdescribed in Embodiment 1, a structure in which the third oxidesemiconductor film 403 c covers the side surface of the first oxidesemiconductor film 403 a and the side and top surfaces of the secondoxide semiconductor film 403 b may be employed. Since the third oxidesemiconductor film 403 c can be provided between the second oxidesemiconductor film 403 b and the electrode layer 445 a, leakage currentcan be reduced.

Embodiment 3

In this embodiment, an example of a semiconductor device including thetransistor described in Embodiment 1 is described with reference toFIGS. 5A and 5B.

The semiconductor device illustrated in FIGS. 5A and 5B includestransistors 740 and 750 including a first semiconductor material in alower portion, and a transistor 610 including a second semiconductormaterial in an upper portion. The transistor 610 has the same structureas the transistor 415 described in Embodiment 1. The same referencenumerals are used for the same parts as those in FIGS. 3A and 3B. FIG.5B is a circuit diagram of the semiconductor device in FIG. 5A.

Here, the first semiconductor material and the second semiconductormaterial are preferably materials having different band gaps. Forexample, the first semiconductor material may be a semiconductormaterial other than an oxide semiconductor (e.g., silicon) and thesecond semiconductor material may be an oxide semiconductor. Atransistor including a material such as silicon can operate at highspeed easily. On the other hand, a transistor including an oxidesemiconductor enables charge to be held for a long time owing to itscharacteristics.

As a substrate used in the semiconductor device, a single crystalsemiconductor substrate or a polycrystalline semiconductor substratemade of silicon or silicon carbide, a compound semiconductor substratemade of silicon germanium or the like, a silicon on insulator (SOI)substrate, or the like can be used. A channel formation region of thetransistor can be formed in or over the semiconductor substrate. Thesemiconductor device in FIG. 5A is an example in which the channelformation region is formed in the semiconductor substrate to form alower transistor.

In the semiconductor device in FIG. 5A, a single crystal siliconsubstrate is used as a substrate 700, the transistors 740 and 750 areformed using the single crystal silicon substrate, and single crystalsilicon is used as the first semiconductor material. The transistor 740is an n-channel transistor and the transistor 750 is a p-channeltransistor. The transistor 740 and the transistor 750 which areelectrically connected to each other form a complementary metal oxidesemiconductor (CMOS) circuit 760.

In this embodiment, the single crystal silicon substrate impartingp-type conductivity is used as the substrate 700; thus, an n-well isformed by adding an impurity element imparting n-type conductivity to aregion in which the p-channel transistor 750 is to be formed. A channelformation region 753 of the transistor 750 is formed in the n-well. Asthe impurity element imparting n-type conductivity, phosphorus (P),arsenic (As), or the like can be used.

Therefore, an impurity element imparting p-type conductivity is notadded to a formation region of the transistor 740 that is the n-channeltransistor; however, a p-well may be formed by adding an impurityelement imparting p-type conductivity. As the impurity element impartingp-type conductivity, boron (B), aluminum (Al), gallium (Ga), or the likemay be used.

Meanwhile, when a single-crystal silicon substrate imparting n-typeconductivity is used, an impurity element imparting p-type conductivitymay be added to form a p-well.

The transistor 740 includes a channel formation region 743, an n-typeimpurity region 744 functioning as a lightly doped drain (LDD) region oran extension region, an n-type impurity region 745 functioning as asource region or a drain region, a gate insulating film 742, and a gateelectrode layer 741. The n-type impurity region 745 has a higherimpurity concentration than the n-type impurity region 744. The sidesurface of the gate electrode layer 741 is provided with a sidewallinsulating layer 746. With the use of the gate electrode layer 741 andthe sidewall insulating layer 746 as masks, the n-type impurity region744 and the n-type impurity region 745 which have different impurityconcentrations can be formed in a self-aligned manner.

The transistor 750 includes the channel formation region 753, a p-typeimpurity region 754 functioning as a lightly doped drain (LDD) region oran extension region, a p-type impurity region 755 functioning as asource region or a drain region, a gate insulating film 752, and a gateelectrode layer 751. The p-type impurity region 755 has a higherimpurity concentration than the p-type impurity region 754. The sidesurface of the gate electrode layer 751 is provided with a sidewallinsulating layer 756. With the use of the gate electrode layer 751 andthe sidewall insulating layer 756 as masks, the p-type impurity region754 and the p-type impurity region 755 which have different impurityconcentrations can be formed in a self-aligned manner.

In the substrate 700, the transistor 740 and the transistor 750 areisolated from each other by an element isolation region 789. Aninsulating film 788 and an insulating film 687 are stacked over thetransistor 740 and the transistor 750. A wiring layer 647 in contactwith the n-type impurity region 745 through an opening in the insulatingfilm 788 and the insulating film 687 and a wiring layer 657 in contactwith the p-type impurity region 755 through an opening in the insulatingfilm 788 and the insulating film 687 are provided over the insulatingfilm 687. A wiring layer 748 is provided over the insulating film 687 soas to electrically connect the transistor 740 and the transistor 750.The wiring layer 748 is electrically connected to the n-type impurityregion 745 through an opening in the insulating film 788 and theinsulating film 687 and reaching the n-type impurity region 745.Further, the wiring layer 748 is electrically connected to the p-typeimpurity region 755 through an opening in the insulating film 788 andthe insulating film 687 and reaching the p-type impurity region 755.

An insulating film 686 is provided over the insulating film 687, thewiring layer 647, the wiring layer 748, and the wiring layer 657. Awiring layer 658 is formed over the insulating film 686. The wiringlayer 658 is electrically connected to a gate wiring through an openingin the insulating films 788, 687, and 686. The gate wiring is formedover the gate insulating film 742 or the gate insulating film 752. Thegate wiring branches into the gate electrode layer 741 and the gateelectrode layer 751.

The semiconductor device of this embodiment is not limited to thestructure in FIG. 5A. As the transistors 740 and 750, a transistorcontaining silicide (salicide) or a transistor which does not include asidewall insulating layer may be used. When a structure that containssilicide (salicide) is used, the resistance of the source region and thedrain region can be further lowered and the operation speed of thesemiconductor device is increased. Further, the semiconductor device canbe operated at low voltage, so that power consumption of thesemiconductor device can be reduced.

Next, the structures of upper elements provided over the lowertransistor in the semiconductor device in FIGS. 5A and 5B are described.

An insulating film 684 is stacked over the insulating film 686 and thewiring layer 658. The conductive layer 491 and a wiring layer 692 areformed over the insulating film 684.

The oxide insulating film 435 is provided over the conductive layer 491and the wiring layer 692. The insulating film 437 is provided over theoxide insulating film 435. The first oxide semiconductor film 403 a isprovided over the insulating film 437. The second oxide semiconductorfilm 403 b which has a different composition from the first oxidesemiconductor film 403 a, and the third oxide semiconductor film 403 cwhich has substantially the same composition as the first oxidesemiconductor film 403 a are provided over the first oxide semiconductorfilm 403 a. Further, the electrode layer 445 a which has a projectingregion in its bottom edge portion and the electrode layer 445 b whichhas a projecting region in its bottom edge portion are provided over thethird oxide semiconductor film 403 c. The insulating film 402 isprovided on and in contact with a region of the second oxidesemiconductor film 403 b which does not overlap with the electrode layer445 a or the electrode layer 445 b (the channel formation region), andthe gate electrode layer 401 is provided thereover.

A capacitor 690 is provided over the same oxide insulating film 435 asthe transistor 610 without an increase in the number of steps. In thecapacitor 690, the electrode layer 445 a serves as one electrode, acapacitor electrode layer 693 serves as the other electrode, and theinsulating film 402 provided therebetween serves as a dielectric. Thecapacitor electrode layer 693 is formed in the same step as the gateelectrode layer 401.

By setting the potential of the conductive layer 491 to GND (or a fixedpotential), the conductive layer 491 serves as a back gate whichcontrols the electrical characteristics of the transistor 610. Theconductive layer 491 has a function of preventing static electricity. Inthe case where the threshold voltage of the transistor 610 is notrequired to be controlled by the conductive layer 491 in order to makethe transistor 610 be a normally-off transistor, the conductive layer491 is not necessarily provided. In the case where the transistor 610 isused for part of a particular circuit and a problem might be caused byproviding the conductive layer 491, the conductive layer 491 is notnecessarily provided in the circuit.

The wiring layer 692 is electrically connected to the wiring layer 658through an opening in the insulating film 684. In the example in thisembodiment, the insulating film 684 is subjected to planarizationtreatment using a CMP method.

In the semiconductor device, the insulating film 684 is provided betweenthe lower portion and the upper portion, and functions as a barrier filmto prevent impurities such as hydrogen, which cause deterioration or achange in electrical characteristics of the transistor 610 in the upperportion, from entering the upper portion from the lower portion. Thus, afine inorganic insulating film (e.g., an aluminum oxide film or asilicon nitride film) having a good property of blocking impurities orthe like is preferably used as the insulating film 684. The insulatingfilm 684 can be formed by using the same material as the insulating film433 described in Embodiment 1.

In the case of using the same manufacturing method as that described inEmbodiment 1, the transistor 610 can be manufactured similarly to thetransistor 415. After that insulating film 407 is formed, an interlayerinsulating film 485 is formed. Further, a semiconductor device having amultilayer structure in which an embedded wiring is formed in theinterlayer insulating film 485 and another semiconductor element,another wiring, or the like is formed above the embedded wiring may bemanufactured.

This embodiment can be freely combined with Embodiment 1 or Embodiment2.

Embodiment 4

As another example of a semiconductor device including the transistordescribed in Embodiment 1, a cross-sectional view of a NOR circuit,which is a logic circuit, is illustrated in FIG. 6A. FIG. 6B is acircuit diagram of the NOR circuit in FIG. 6A, and FIG. 6C is a circuitdiagram of a NAND circuit.

In the NOR circuit illustrated in FIGS. 6A and 6B, p-channel transistors801 and 802 each have a structure similar to that of the transistor 750in FIGS. 5A and 5B in that a single crystal silicon substrate is usedfor a channel formation region, and n-channel transistors 803 and 804each have a structure similar to that of the transistor 610 in FIGS. 5Aand 5B and that of the transistor 415 in Embodiment 1 in that an oxidesemiconductor film is used for a channel formation region.

In the NOR circuit and the NAND circuit illustrated in FIGS. 6A and 6B,a conductive layer 491 for controlling electrical characteristics of thetransistors is provided to overlap with gate electrode layers with oxidesemiconductor films provided therebetween in the transistors 803 and804. By controlling the potential of the conductive layer to GND, forexample, the threshold voltages of the transistors 803 and 804 areincreased, so that the transistors can be normally off. In the NORcircuit in this embodiment, conductive layers which are provided in thetransistors 803 and 804 and can function as back gates are electricallyconnected to each other. However, the present invention is not limitedto the structure, and the conductive layers functioning as back gatesmay be electrically controlled independently.

In the semiconductor device illustrated in FIG. 6A, a single crystalsilicon substrate is used as a substrate 800, the transistor 802 isformed using the single crystal silicon substrate, and the transistor803 in which stacked oxide semiconductor films are used for a channelformation region is formed over the transistor 802.

The gate electrode layer 401 of the transistor 803 is electricallyconnected to a wiring layer 832. The wiring layer 832 is electricallyconnected to a wiring layer 835. The gate electrode layer 401 of thetransistor 803 is electrically connected to an embedded wiring, and theembedded wiring is electrically connected to an electrode layer 842.Note that the embedded wiring includes a first barrier metal film 486, asecond barrier metal film 488, and a low-resistance conductive layer 487surrounded by the first barrier metal film 486 and the second barriermetal film 488.

The embedded wiring is formed in such a manner that a contact holereaching the electrode layer 842 is formed in the interlayer insulatingfilm 485, the first barrier metal film 486 is formed, and a copper filmor a copper alloy film is formed thereover so as to form thelow-resistance conductive layer 487. Then, polishing is performed forplanarization, and the second barrier metal film 488 is formed so as toprotect the exposed low-resistance conductive layer 487.

Each of the first barrier metal film 486 and the second barrier metalfilm 488 may be formed using a conductive material which suppressesdiffusion of copper contained in the low-resistance conductive layer487. Examples of the conductive material are a tantalum nitride film, amolybdenum nitride film, and a tungsten nitride film.

The wiring layer 832 is provided in an opening formed in an insulatingfilm 826 and an insulating film 830. The wiring layer 835 is provided inan opening formed in an insulating film 833. The electrode layer 842 isformed over the wiring layer 835.

An electrode layer 825 of the transistor 802 is electrically connectedthe electrode layer 445 b of the transistor 803 through wiring layers831 and 834. The wiring layer 831 is formed in an opening in theinsulating film 830, and the wiring layer 834 is formed in an opening inthe insulating film 833. The electrode layer 445 a and the electrodelayer 445 b function as source and drain electrode layers of thetransistor 803.

The first oxide semiconductor film 403 a is formed on and in contactwith the insulating film 437. The third oxide semiconductor film 403 cis formed on and in contact with the second oxide semiconductor film 403b. With the insulating film 437 and the insulating film 402, unnecessaryrelease of oxygen can be suppressed, and the second oxide semiconductorfilm 403 b can be kept in an oxygen excess state. Thus, in thetransistor 803, oxygen vacancies in the second oxide semiconductor film403 b and at the interface thereof can be filled efficiently. Thetransistor 804 has a structure and an effect which are similar to thoseof the transistor 803.

In the NAND circuit in FIG. 6C, p-channel transistors 811 and 814 eachhave a structure similar to that of the transistor 750 in FIGS. 5A and5B, and n-channel transistors 812 and 813 each have a structure similarto that of the transistor 610 in FIGS. 5A and 5B in that an oxidesemiconductor film is used for a channel formation region.

In the NAND circuit illustrated in FIG. 6C, conductive layerscontrolling electrical characteristics of the transistors are providedto overlap with gate electrode layers with oxide semiconductor filmsprovided therebetween in the transistors 812 and 813. By controlling thepotential of the conductive layer to GND, for example, the thresholdvoltages of the transistors 812 and 813 are increased, so that thetransistors can be normally off. In the NAND circuit in this embodiment,the conductive layers which are provided in the transistors 812 and 813and function as back gates are electrically connected to each other.However, the present invention is not limited to the structure, and theconductive layers functioning as back gates may be electricallycontrolled independently.

By applying a transistor including an oxide semiconductor for a channelformation region and having extremely small off-state current to thesemiconductor device in this embodiment, power consumption of thesemiconductor device can be sufficiently reduced.

A semiconductor device which is miniaturized, is highly integrated, andhas stable and excellent electrical characteristics by stackingsemiconductor elements including different semiconductor materials and amethod for manufacturing the semiconductor device can be provided.

The NOR circuit and the NAND circuit including the transistors describedin Embodiment 1 are described as examples in this embodiment; however,the present invention is not limited to the circuits, and an ANDcircuit, an OR circuit, or the like can be formed using the transistorsdescribed in Embodiment 1 or 2. For example, a semiconductor device(storage device) in which stored data can be held even when power is notsupplied and which has an unlimited number of times of writing with thetransistors described in Embodiment 1 or 2 can be manufactured.

FIG. 7 is an example of a circuit diagram of a semiconductor device.

In FIG. 7, a first wiring (a 1st line) is electrically connected to asource electrode layer of a transistor 160. A second wiring (2nd line)is electrically connected to a drain electrode layer of the transistor160. Any of the transistors 750 and 802 described in this embodiment canbe used as the transistor 160.

A third wiring (3rd line) is electrically connected to one of a sourceelectrode layer and a drain electrode layer of a transistor 162, and afourth wiring (4th line) is electrically connected to a gate electrodelayer of the transistor 162. A gate electrode layer of the transistor160 and the other of the source electrode and the drain electrode of thetransistor 162 are electrically connected to one electrode of thecapacitor 164. A fifth wiring (5th line) and the other electrode of thecapacitor 164 are electrically connected to each other.

For the transistor 162, any of the structures of the transistors 415,416, and 417 described in Embodiment 1 or 2 can be used.

The semiconductor device having the circuit configuration in FIG. 7utilizes a characteristic in which the potential of the gate electrodelayer of the transistor 160 can be held, and thus enables data writing,holding, and reading as follows.

Writing and holding of data are described. First, the potential of thefourth wiring is set to a potential at which the transistor 162 isturned on, so that the transistor 162 is turned on. Accordingly, thepotential of the third wiring is supplied to the gate electrode layer ofthe transistor 160 and to the capacitor 164. That is, predeterminedcharge is supplied to the gate electrode layer of the transistor 160(writing). Here, charge for supply of a potential level or charge forsupply of a different potential level (hereinafter referred to as alow-level charge and a high-level charge) is given. After that, thepotential of the fourth wiring is set to a potential at which thetransistor 162 is turned off, so that the transistor 162 is turned off.Thus, the charge given to the gate electrode layer of the transistor 160is held (holding).

Since the off-state current of the transistor 162 is extremely small,the charge of the gate electrode layer of the transistor 160 is held fora long time.

Next, reading of data is described. By supplying an appropriatepotential (a reading potential) to the fifth wiring while apredetermined potential (a constant potential) is supplied to the firstwiring, the potential of the second wiring varies depending on theamount of charge held in the gate electrode layer of the transistor 160.This is because in general, when the transistor 160 is an n-channeltransistor, an apparent threshold voltage V_(th) _(—) _(H) in the casewhere the high-level charge is given to the gate electrode layer of thetransistor 160 is lower than an apparent threshold voltage V_(th) _(—)_(L) in the case where the low-level charge is given to the gateelectrode layer of the transistor 160. Here, an apparent thresholdvoltage refers to the potential of the fifth wiring, which is needed toturn on the transistor 160. Thus, the potential of the fifth wiring isset to a potential V₀ which is between V_(th) _(—) _(H) and V_(th) _(—)_(L), whereby charge given to the gate electrode layer of the transistor160 can be determined. For example, in the case where the high-levelcharge is given in writing, when the potential of the fifth wiring isset to V₀ (>V_(th) _(—) _(H)), the transistor 160 is turned on. In thecase where a low-level charge is given in writing, even when thepotential of the fifth wiring is set to V₀ (<V_(th) _(—) _(L)), thetransistor 160 remains in an off state. Therefore, the stored data canbe read by the potential of the second wiring.

Note that in the case where memory cells are arrayed to be used, onlydata of desired memory cells needs to be read. In the case where suchreading is not performed, a potential at which the transistor 160 isturned off regardless of the state of the gate electrode layer of thetransistor 160, that is, a potential smaller than V_(th) _(—) _(H) maybe given to the fifth wiring. Alternatively, a potential at which thetransistor 160 is turned on regardless of the state of the gateelectrode layer, that is, a potential higher than V_(th) _(—) _(L) maybe given to the fifth wiring.

FIG. 8 illustrates another example of one embodiment of the structure ofthe storage device.

FIG. 8 is a perspective view of a storage device. The storage deviceillustrated in FIG. 8 includes a plurality of layers of memory cellarrays (memory cell arrays 3400(1) to 3400(n) (n is an integer greaterthan or equal to 2)) each including a plurality of memory cells asmemory circuits in the upper portion, and a logic circuit 3004 in thelower portion which is necessary for operating the memory cell arrays3400(1) to 3400(n).

FIG. 8 illustrates the logic circuit 3004, the memory cell array3400(1), and the memory cell array 3400(2), in which a memory cell 3170a and a memory cell 3170 b are illustrated as typical examples among theplurality of memory cells included in the memory cell array 3400(1) andthe memory cell array 3400(2). The memory cell 3170 a and the memorycell 3170 b can have a configuration similar to the circuitconfiguration described in this embodiment with reference to FIG. 7, forexample.

A transistor in which a channel formation region is formed in an oxidesemiconductor film is used as each transistor included in the memorycells 3170 a and 3170 b. The structure of the transistor in which thechannel formation region is formed in the oxide semiconductor film isthe same as the structure described in Embodiment 1; thus, thedescription of the structure is omitted.

The logic circuit 3004 includes a transistor in which a semiconductormaterial other than an oxide semiconductor is used as a channelformation region. For example, the transistor can be a transistorobtained in such a manner that an element isolation insulating layer isprovided on a substrate including a semiconductor material (e.g.,silicon) and a region serving as the channel formation region is formedin a region surrounded by the element isolation insulating layer. Notethat the transistor may be a transistor obtained in such a manner thatthe channel formation region is formed in a semiconductor film such as apolycrystalline silicon film formed on an insulating surface or in asilicon film of an SOI substrate.

The memory cell arrays 3400(1) to 3400(n) and the logic circuit 3004 arestacked with interlayer insulating layers provided therebetween, andelectrical connection or the like may be established as appropriate byan electrode or a wiring penetrating the interlayer insulating layers.

When a transistor having a channel formation region formed using anoxide semiconductor and having extremely small off-state current isapplied to the semiconductor device in this embodiment, thesemiconductor device can store data for an extremely long period. Inother words, power consumption can be adequately reduced because refreshoperation becomes unnecessary or the frequency of refresh operation canbe extremely low. Moreover, stored data can be held for a long periodeven when power is not supplied (note that a potential is preferablyfixed).

Further, in the semiconductor device described in this embodiment, highvoltage is not needed for writing data and there is no problem ofdeterioration of elements. For example, unlike a conventionalnon-volatile memory, it is not necessary to inject and extract electronsinto and from a floating gate; thus, the problem of deterioration of agate insulating film does not occur. In other words, the semiconductordevice according to one embodiment of the present invention does nothave a limit on the number of times of writing which is a problem in aconventional nonvolatile memory, and reliability thereof is drasticallyimproved. Furthermore, data is written depending on the on state and theoff state of the transistor, whereby high-speed operation can be easilyrealized.

As described above, a miniaturized and highly-integrated semiconductordevice having high electric characteristics and a method formanufacturing the semiconductor device can be provided.

This embodiment can be freely combined with any of Embodiment 1,Embodiment 2, and Embodiment 3.

Embodiment 5

In this embodiment, a central processing unit (CPU) in which at leastone of the transistors 415, 416, 418 described in Embodiment 1 or 2 andthe transistors 120, 121, 122, 123, and 130 described in Embodiment 7 or8 is provided in part of the CPU is described as an example of asemiconductor device.

FIG. 9A is a block diagram illustrating a specific structure of a CPU.The CPU illustrated in FIG. 9A includes an arithmetic logic unit (ALU)1191, an ALU controller 1192, an instruction decoder 1193, an interruptcontroller 1194, a timing controller 1195, a register 1196, a registercontroller 1197, a bus interface (Bus I/F) 1198, a rewritable ROM 1199,and a ROM interface (ROM I/F) 1189 over a substrate 1190. Asemiconductor substrate, an SOI substrate, a glass substrate, or thelike is used as the substrate 1190. The ROM 1199 and the ROM interface1189 may each be provided over a separate chip. Obviously, the CPUillustrated in FIG. 9A is only an example in which the structure issimplified, and a variety of structures is applied to an actual CPUdepending on the application.

An instruction that is input to the CPU through the bus interface 1198is input to the instruction decoder 1193 and decoded therein, and then,input to the ALU controller 1192, the interrupt controller 1194, theregister controller 1197, and the timing controller 1195.

The ALU controller 1192, the interrupt controller 1194, the registercontroller 1197, and the timing controller 1195 conduct various controlsin accordance with the decoded instruction. Specifically, the ALUcontroller 1192 generates signals for controlling the operation of theALU 1191. While the CPU is executing a program, the interrupt controller1194 determines an interrupt request from an external input/outputdevice or a peripheral circuit on the basis of its priority or a maskstate, and processes the request. The register controller 1197 generatesan address of the register 1196, and reads/writes data from/to theregister 1196 in accordance with the state of the CPU.

The timing controller 1195 generates signals for controlling operationtimings of the ALU 1191, the ALU controller 1192, the instructiondecoder 1193, the interrupt controller 1194, and the register controller1197. For example, the timing controller 1195 includes an internal clockgenerator for generating an internal clock signal CLK2 based on areference clock signal CLK1, and supplies the internal clock signal CLK2to the above circuits.

In the CPU illustrated in FIG. 9A, a memory cell is provided in theregister 1196. As the memory cell of the register 1196, the memory celldescribed in Embodiment 4 can be used.

In the CPU illustrated in FIG. 9A, the register controller 1197 selectsoperation of holding data in the register 1196 in accordance with aninstruction from the ALU 1191. That is, the register controller 1197selects whether data is held by a flip-flop or by a capacitor in thememory cell included in the register 1196. When data holding by theflip-flop is selected, a power supply voltage is supplied to the memorycell in the register 1196. When data holding by the capacitor isselected, the data is rewritten in the capacitor, and supply of powersupply voltage to the memory cell in the register 1196 can be stopped.

The power supply can be stopped by a switching element provided betweena memory cell group and a node to which a power supply potential VDD ora power supply potential VSS is supplied, as illustrated in FIG. 9B orFIG. 9C. Circuits illustrated in FIGS. 9B and 9C are described below.

FIGS. 9B and 9C each illustrate an example of a memory circuit in whichone of the transistors 415, and 416, and 418 described in Embodiment 1or 2 and the transistors 120, 121, 122, 123, and 130 described inEmbodiment 7 or 8 is used as a switching element for controlling supplyof power supply potential to memory cells.

The storage device illustrated in FIG. 9B includes a switching element1141 and a memory cell group 1143 including a plurality of memory cells1142. Specifically, as each of the memory cells 1142, the memory celldescribed in Embodiment 3 can be used. Each of the memory cells 1142included in the memory cell group 1143 is supplied with the high-levelpower supply potential VDD via the switching element 1141. Further, eachof the memory cells 1142 included in the memory cell group 1143 issupplied with a potential of a signal IN and the low-level power supplypotential VSS.

In FIG. 9B, any of the transistors 415, 416, and 418 described inEmbodiment 1 or 2 is used as the switching element 1141, and theswitching of the transistor is controlled by a signal SigA supplied to agate electrode layer thereof.

Note that FIG. 9B illustrates a configuration in which the switchingelement 1141 includes only one transistor; however, one embodiment ofthe present invention is not limited thereto. In the case where theswitching element 1141 includes a plurality of transistors which servesas switching elements, the plurality of transistors may be connected toeach other in parallel, in series, or in combination of parallelconnection and series connection.

Although the switching element 1141 controls the supply of thehigh-level power supply potential VDD to each of the memory cells 1142included in the memory cell group 1143 in FIG. 9B, the switching element1141 may control the supply of the low-level power supply potential VSS.

FIG. 9C illustrates an example of a storage device in which each of thememory cells 1142 included in the memory cell group 1143 is suppliedwith the low-level power supply potential VSS through the switchingelement 1141. The supply of the low-level power supply potential VSS toeach of the memory cells 1142 included in the memory cell group 1143 canbe controlled by the switching element 1141.

When a switching element is provided between a memory cell group and anode to which the power supply potential VDD or the power supplypotential VSS is supplied, data can be held even in the case where anoperation of a CPU is temporarily stopped and the supply of the powersupply voltage is stopped; accordingly, power consumption can bereduced. Specifically, for example, while a user of a personal computerdoes not input data to an input device such as a keyboard, the operationof the CPU can be stopped, so that the power consumption can be reduced.

Although the CPU is given as an example in this embodiment, thetransistor can also be applied to an LSI such as a digital signalprocessor (DSP), a custom LSI, or a field programmable gate array(FPGA).

The methods and structures described in this embodiment can be combinedas appropriate with any of the methods and structures described in theother embodiments.

Embodiment 6

A semiconductor device disclosed in this specification can be applied toa variety of electronic appliances (including game machines). Examplesof the electronic appliances include display devices of televisions,monitors, and the like, lighting devices, desktop personal computers andlaptop personal computers, word processors, image reproduction deviceswhich reproduce still images or moving images stored in recording mediasuch as digital versatile discs (DVDs), portable compact disc (CD)players, radio receivers, tape recorders, headphone stereos, stereos,cordless phone handsets, transceivers, portable wireless devices, mobilephones, car phones, portable game machines, calculators, portableinformation terminals, electronic notebooks, e-book readers, electronictranslators, audio input devices, cameras such as still cameras andvideo cameras, electric shavers, high-frequency heating appliances suchas microwave ovens, electric rice cookers, electric washing machines,electric vacuum cleaners, air-conditioning systems such as airconditioners, dishwashers, dish dryers, clothes dryers, futon dryers,electric refrigerators, electric freezers, electricrefrigerator-freezers, freezers for preserving DNA, smoke detectors,radiation counters, and medical equipment such as dialyzers. Further,the examples include industrial equipment such as guide lights, trafficlights, belt conveyors, elevators, escalators, industrial robots, andpower storage systems. In addition, oil engines, moving objects drivenby electric motors using power from the non-aqueous secondary batteries,and the like are also included in the category of electric appliances.Examples of the moving objects include electric vehicles (EV), hybridelectric vehicles (HEV) which include both an internal-combustion engineand a motor, plug-in hybrid electric vehicles (PHEV), tracked vehiclesin which caterpillar tracks are substituted for wheels of thesevehicles, motorized bicycles including motor-assisted bicycles,motorcycles, electric wheelchairs, golf carts, boats or ships,submarines, helicopters, aircrafts, rockets, artificial satellites,space probes, planetary probes, spacecrafts, and the like. Specificexamples of these electronic devices are illustrated in FIGS. 10A to 10Cand FIGS. 11A to 11C.

FIGS. 10A and 10B illustrate a tablet terminal that can be folded intwo. FIG. 10A illustrates the tablet terminal which is open (unfolded).The tablet terminal includes a housing 9630, a display portion 9631 a, adisplay portion 9631 b, a switch 9034 for switching display modes, apower switch 9035, a switch 9036 for switching to power-saving mode, afastener 9033, and an operation switch 9038.

In such a portable device illustrated in FIGS. 10A and 10B, an SRAM or aDRAM is used as a memory for temporarily storing image data. Forexample, the semiconductor device described in Embodiment 4 can be usedas a memory. The semiconductor device described in the above embodimentemployed for the memory element enables writing and reading of data tobe performed at high speed, enables data to be retained for a long time,and enables power consumption to be sufficiently reduced. A CPU forperforming image processing or arithmetic processing is used in theportable device illustrated in FIGS. 10A and 10B. As the CPU, the CPUdescribed in Embodiment 5 can be used, in which case the CPU describedin Embodiment 5 is used, power consumption of the portable device can bereduced.

A touch panel region 9632 a can be provided in a part of the displayportion 9631 a, in which data can be input by touching displayedoperation keys 9638. Note that FIG. 10A shows, as an example, that halfof the area of the display portion 9631 a has only a display functionand the other half of the area has a touch panel function. However, thestructure of the display portion 9631 a is not limited to this, and allthe area of the display portion 9631 a may have a touch panel function.For example, all the area of the display portion 9631 a can displaykeyboard buttons and serve as a touch panel while the display portion9631 b can be used as a display screen.

Like the display portion 9631 a, part of the display portion 9631 b canbe a touch panel region 9632 b. When a finger, a stylus, or the liketouches the place where a button 9639 for switching to keyboard displayis displayed in the touch panel, keyboard buttons can be displayed onthe display portion 9631 b.

Touch input can be performed concurrently on the touch panel regions9632 a and 9632 b.

The switch 9034 for switching display modes allows switching between alandscape mode and a portrait mode, color display and black-and-whitedisplay, and the like. With the switch 9036 for switching topower-saving mode, the luminance of display can be optimized inaccordance with the amount of external light at the time when the tabletis in use, which is detected with an optical sensor incorporated in thetablet. The tablet terminal may include another detection device such asa sensor for detecting orientation (e.g., a gyroscope or an accelerationsensor) in addition to the optical sensor.

Although FIG. 10A shows the example where the display area of thedisplay portion 9631 a is the same as that of the display portion 9631b, there is no particular limitation on the display portions 9631 a and9631 b. They may differ in size and/or image quality. For example, oneof them may be a display panel that can display higher-definition imagesthan the other.

FIG. 10B illustrates the tablet terminal which is closed. The tabletterminal includes the housing 9630, a solar battery 9633, acharge/discharge control circuit 9634, a battery 9635, and a DC-DCconverter 9636. As an example, FIG. 10B illustrates the charge/dischargecontrol circuit 9634 including the battery 9635 and the DC-DC converter9636.

Since the tablet terminal can be folded in two, the housing 9630 can beclosed when the tablet is not in use. Thus, the display portions 9631 aand 9631 b can be protected, thereby providing a tablet terminal withhigh endurance and high reliability for long-term use.

The tablet terminal illustrated in FIGS. 10A and 10B can also have afunction of displaying various kinds of data (e.g., a still image, amoving image, and a text image), a function of displaying a calendar, adate, the time, or the like on the display portion, a touch-inputfunction of operating or editing data displayed on the display portionby touch input, a function of controlling processing by various kinds ofsoftware (programs), and the like.

The solar battery 9633, which is attached on the surface of the tabletterminal, supplies electric power to a touch panel, a display portion,an image signal processor, and the like. Note that the solar battery9633 can be provided on one or both surfaces of the housing 9630 and thebattery 9635 can be charged efficiently. When a lithium ion battery isused as the battery 9635, there is an advantage of downsizing or thelike.

The structure and operation of the charge/discharge control circuit 9634illustrated in FIG. 10B will be described with reference to a blockdiagram in FIG. 10C. FIG. 10C illustrates the solar battery 9633, thebattery 9635, the DC-DC converter 9636, a converter 9637, switches SW1to SW3, and the display portion 9631. The battery 9635, the DC-DCconverter 9636, the converter 9637, and the switches SW1 to SW3correspond to the charge/discharge control circuit 9634 illustrated inFIG. 10B.

First, an example of operation in the case where power is generated bythe solar battery 9633 using external light is described. The voltage ofpower generated by the solar battery 9633 is raised or lowered by theDC-DC converter 9636 so that a voltage for charging the battery 9635 isobtained. When the display portion 9631 is operated with the power fromthe solar battery 9633, the switch SW1 is turned on and the voltage ofthe power is raised or lowered by the converter 9637 to a voltage neededfor operating the display portion 9631. In addition, when display on thedisplay portion 9631 is not performed, the switch SW1 is turned off anda switch SW2 is turned on so that charge of the battery 9635 may beperformed.

Here, the solar battery 9633 is shown as an example of a powergeneration means; however, there is no particular limitation on a way ofcharging the battery 9635, and the battery 9635 may be charged withanother power generation means such as a piezoelectric element or athermoelectric conversion element (Peltier element). For example, thebattery 9635 may be charged with a non-contact power transmission modulethat transmits and receives power wirelessly (without contact) to chargethe battery or with a combination of other charging means.

In a television set 8000 in FIG. 11A, a display portion 8002 isincorporated in a housing 8001. The display portion 8002 displays animage and a speaker portion 8003 can output sound.

A semiconductor display device such as a liquid crystal display device,a light-emitting device in which a light-emitting element such as anorganic EL element is provided in each pixel, an electrophoresis displaydevice, a digital micromirror device (DMD), or a plasma display panel(PDP) can be used for the display portion 8002.

The television set 8000 may be provided with a receiver, a modem, andthe like. Furthermore, when the television set 8000 is connected to acommunication network by wired or wireless connection via the modem,one-way (from a transmitter to a receiver) or two-way (between atransmitter and a receiver, between receivers, or the like) datacommunication can be performed.

In addition, the television set 8000 may include a CPU for performinginformation communication or a memory. The memory described inEmbodiment 4 or the CPU described in Embodiment 5 can be used in thetelevision set 8000.

In FIG. 11A, an air conditioner which includes an indoor unit 8200 andan outdoor unit 8204 is an example of an electric appliance in which theCPU of Embodiment 5 is used. Specifically, the indoor unit 8200 includesa housing 8201, an air outlet 8202, a CPU 8203, and the like. Althoughthe CPU 8203 is provided in the indoor unit 8200 in FIG. 11A, the CPU8203 may be provided in the outdoor unit 8204. Alternatively, the CPU8203 may be provided in both the indoor unit 8200 and the outdoor unit8204. By using the CPU described in Embodiment 5 as the CPU in the airconditioner, power consumption can be reduced.

In FIG. 11A, an electric refrigerator-freezer 8300 is an example of anelectric appliance which is provided with the CPU formed using an oxidesemiconductor. Specifically, the electric refrigerator-freezer 8300includes a housing 8301, a door for a refrigerator 8302, a door for afreezer 8303, a CPU 8304, and the like. In FIG. 11A, the CPU 8304 isprovided in the housing 8301. When the CPU described in Embodiment 5 isused as the CPU 8304 of the electric refrigerator-freezer 8300, powerconsumption of the electric refrigerator-freezer 8300 can be reduced.

An example of an electric vehicle which is an example of an electricappliance is described in FIG. 11B. An electric vehicle 9700 is equippedwith a secondary battery 9701. The output of power of the non-aqueoussecondary battery 9701 is adjusted by a control circuit 9702 and thepower is supplied to a driving device 9703. The control circuit 9702 iscontrolled by a processing unit 9704 including a ROM, a RAM, a CPU, orthe like which is not illustrated. When the CPU described in Embodiment5 is used as the CPU in the electric vehicle 9700, power consumption ofthe electric vehicle 9700 can be reduced.

The driving device 9703 includes a DC motor or an AC motor either aloneor in combination with an internal-combustion engine. The processingunit 9704 outputs a control signal to the control circuit 9702 based oninput data such as data of operation (e.g., acceleration, deceleration,or stop) by a driver or data during driving (e.g., data on an upgrade ora downgrade, or data on a load on a driving wheel) of the electricvehicle 9700. The control circuit 9702 adjusts the electric energysupplied from the secondary battery 9701 in accordance with the controlsignal of the processing unit 9704 to control the output of the drivingdevice 9703. In the case where the AC motor is mounted, although notillustrated, an inverter which converts direct current into alternatecurrent is also incorporated.

This embodiment can be implemented in combination with any of the otherembodiments, as appropriate.

Embodiment 7

In this embodiment, one embodiment of a semiconductor device isdescribed with reference to FIGS. 16A to 16C.

Note that a cross-sectional view of a transistor 123 illustrated in FIG.16B corresponds to a structural view taken along a chain line A-B in atop view illustrated in FIG. 16A.

The transistor 123 in FIGS. 16A to 16C includes a base insulating layer133 which is provided over a substrate 100; an oxide semiconductor stack109 which is provided over the base insulating layer 133 and includes atleast a channel formation region 103 b, a low-resistance region 104 c,and a low-resistance region 108 c; a gate insulating layer 102 and agate electrode layer 101 which are provided over the channel formationregion 103 b; a silicon nitride film 107 over the oxide semiconductorstack 109, the gate insulating layer 102, and the gate electrode layer101; and electrode layers 105 a and 105 b which are electricallyconnected to the low-resistance region 104 c and the low-resistanceregion 108 c, respectively, through openings provided in the siliconnitride film 107. The electrode layers 105 a and 105 b function as asource electrode layer and a drain electrode layer.

In the above structure, the base insulating layer 133 is a stack inwhich a second base insulating layer 133 b is provided over a first baseinsulating layer 133 a. A silicon nitride film is used as the first baseinsulating layer 133 a, and a silicon oxide film is used as the secondbase insulating layer 133 b. The gate insulating layer 102 is a stack inwhich a second gate insulating layer 102 b is provided over a first gateinsulating layer 102 a. A silicon oxide film is used as the first gateinsulating layer 102 a, and a silicon nitride film is used as the secondgate insulating layer 102 b. Since the oxide semiconductor stack 109 iscovered with the silicon nitride film 107, moisture and hydrogen can beprevented from entering the channel formation region 103 b from theoutside, so that the reliability of the transistor 123 is improved.

In the above structure, the oxide semiconductor stack 109 is formed ofthe following three oxide semiconductor layers: the first oxidesemiconductor layer S1 which includes a first region 104 a, a secondregion 103 a, and a third region 108 a; the second oxide semiconductorlayer S2 which includes a fourth region 104 b, the channel formationregion 103 b, and a fifth region 108 b; and the third oxidesemiconductor layer S3 which includes the low-resistance region 104 c, asixth region 103 c, and the low-resistance region 108 c. The oxidesemiconductor layer S1, the oxide semiconductor layer S2, and the oxidesemiconductor layer S3 are stacked in this order. The three oxidesemiconductor layers may be films having a crystalline structure orfilms having an amorphous structure.

Of the three oxide semiconductor layers, the second oxide semiconductorhas the smallest thickness. The three oxide semiconductor layers eachhave a thickness greater than or equal to 5 nm and less than or equal to40 nm. There is no particular limitation on a material of the secondoxide semiconductor layer as long as it is an oxide semiconductor whichhas higher carrier density and larger conductivity σ than those of theother oxide semiconductor layers.

For example, an In—Ga—Zn-based oxide film which is deposited using asputtering target having an atomic ratio of In:Ga:Zn=1:1:1 may be usedas the first oxide semiconductor layer S1, an In—Ga—Zn-based oxide filmwhich is deposited using a sputtering target having an atomic ratio ofIn:Ga:Zn=3:1:2 may be used as the second oxide semiconductor layer S2,and an In—Ga—Zn-based oxide film which is deposited using a sputteringtarget having an atomic ratio of In:Ga:Zn=1:1:1 may be used as the thirdoxide semiconductor layer S3. In the case of forming these three layers,each layer is preferably deposited by a sputtering method in a mixedatmosphere containing more oxygen than a rare gas, preferably in anoxygen atmosphere (oxygen: 100%), and all of the resulting oxidesemiconductor layers can also be referred to as I-type oxidesemiconductor layers. The I-type oxide semiconductor layer is a highlypurified oxide semiconductor layer that contains impurities other thanthe main components of the oxide semiconductor layer as little aspossible and is an I-type (intrinsic) semiconductor or is close thereto.In such an oxide semiconductor layer, the Fermi level (Ef) is at thesame level as the intrinsic Fermi level (Ei).

In the case of another combination of the stacked layers, anIn—Ga—Zn-based oxide film which is deposited using a sputtering targethaving an atomic ratio of In:Ga:Zn=1:3:2 may be used as the first oxidesemiconductor layer S1, an In—Ga—Zn-based oxide film which is depositedin an nitrogen atmosphere using a sputtering target having an atomicratio of In:Ga:Zn=3:1:2 may be used as the second oxide semiconductorlayer S2, and an In—Ga—Zn-based oxide film which is deposited using asputtering target having an atomic ratio of In:Ga:Zn=1:1:1 may be usedas the third oxide semiconductor layer S3. In forming the second oxidesemiconductor layer S2, deposition is preferably performed in anatmosphere containing more nitrogen than oxygen, more preferably in anitrogen atmosphere (nitrogen: 100%), and the resulting second oxidesemiconductor layer can also be referred to as an N⁺-type oxidesemiconductor layer. These three layers can be expressed as “an I-typelayer, an N⁺-type layer and an I-type layer are stacked in this order”.

In the case of another combination of the stacked layers, anitrogen-containing In—Ga—Zn-based oxide film which is deposited in amixed atmosphere of oxygen and nitrogen using a sputtering target havingan atomic ratio of In:Ga:Zn=1:3:2 may be used as the first oxidesemiconductor layer S1; a nitrogen-containing In—Ga—Zn-based oxide filmwhich is deposited in a nitrogen atmosphere using a sputtering targethaving an atomic ratio of In:Ga:Zn=3:1:2 may be used as the second oxidesemiconductor layer S2; and a nitrogen-containing In—Ga—Zn-based oxidefilm which is deposited in a mixed atmosphere of oxygen and nitrogenusing a sputtering target having an atomic ratio of In:Ga:Zn=1:1:1 maybe used as the third oxide semiconductor layer S3. In forming the firstoxide semiconductor layer S1 and the third oxide semiconductor layer S3,deposition is preferably performed by a sputtering method in a mixedatmosphere containing more oxygen than nitrogen, and the resulting firstand third oxide semiconductor layers can also be referred to as N⁻-typeoxide semiconductor layers. These three layers can be expressed as “anN⁻-type layer, an N⁺-type layer, and an N⁻-type layer are stacked inthis order”.

In the case where steps for stacking the three oxide semiconductorlayers in this order are performed successively without exposure to theair, a manufacturing apparatus a top view of which is illustrated inFIG. 15 may be used.

As the sputtering devices in the manufacturing apparatus in FIG. 15, aparallel plate sputtering device, an ion beam sputtering device, afacing-target sputtering device, or the like may be used. In afacing-target type sputtering device, an object surface is separatedfrom plasma and thus damage in deposition is small; therefore, a CAAC-OSfilm having high crystallinity can be formed.

The low-resistance region 104 c and the low-resistance region 108 c areprovided in contact with the silicon nitride film 107 and thus have ahigher nitrogen concentration and lower resistance than the sixth region103 c. In addition, in this embodiment, the channel formation region 103b has higher conductivity σ than the low-resistance region 104 c and thelow-resistance region 108 c.

In the above structure, the second region 103 a is provided between thechannel formation region 103 b and the base insulating layer 133, andthe channel formation region 103 b is separated from the base insulatinglayer 133 containing silicon. The second region 103 a prevents the entryof silicon from the base insulating layer 133. The sixth region 103 c isprovided between the channel formation region 103 b and the gateinsulating layer 102, and the channel formation region 103 b isseparated from the gate insulating layer 102 containing silicon.Accordingly, the transistor 123 has a buried channel structure in whichthe channel formation region 103 b through which carriers flow isseparated from the insulating film containing silicon.

FIG. 16C is an energy band taken along a line C-C′ in FIG. 16B. Asillustrated in FIG. 16C, the energy level of the bottom of theconduction band in the second oxide semiconductor layer S2 are lowerthan those of the bottoms of the conduction band in the first oxidesemiconductor layer S1 and the third oxide semiconductor layer S3.

In the case where the second region 103 a is provided, the second region103 a prevents impurities such as silicon from entering the channelformation region 103 b, thereby preventing a reduction in thefield-effect mobility of the transistor. Further, when the channelformation region 103 b is formed using an oxide semiconductor havinghigh conductivity σ, higher field-effect mobility can be achieved.Furthermore, the sixth region 103 c provided over the channel formationregion 103 b is depleted, whereby a sufficiently low off-state currentcan be obtained.

The energy band diagram in FIG. 16C is merely an example, and thus thisembodiment is not limited thereto. For example, the deposition conditionor the sputtering target may be changed during the deposition of thesecond oxide semiconductor layer S2 to form a layer S21 and a layer S22,so that an energy band diagram illustrated in FIG. 17A may be obtained.The total thickness of the layer S21 and the layer S22 is preferablygreater than or equal to 15 nm and less than or equal to 30 nm. Thelength of the third oxide semiconductor layer S3 can be a substantialchannel length and thus preferably has a larger thickness than the firstoxide semiconductor layer S1 and the second oxide semiconductor layerS2.

Alternatively, the deposition condition may be changed successivelyduring the deposition of the second oxide semiconductor layer S2 to formthe layer S21 and the layer S22, so that an energy band diagramillustrated in FIG. 17B may be obtained.

Further alternatively, the deposition condition may be changedsuccessively during the deposition of the third oxide semiconductorlayer S3 to form a layer S31 and a layer S32, so that an energy banddiagram illustrated in FIG. 17C may be obtained. The total thickness ofthe layer S31 and the layer S32 is preferably greater than or equal to15 nm and less than or equal to 30 nm.

Embodiment 8

In this embodiment, one embodiment of a semiconductor device and oneembodiment of a method for manufacturing the semiconductor device aredescribed with reference to FIGS. 18A to 18D. In this embodiment, anexample of a method for manufacturing the transistor 120 is described,in which the low-resistance regions 104 c and 108 c are formed byaddition of an impurity element (also referred to as a dopant) so as tohave lower electrical resistance than the channel formation region 103b.

First, the base insulating layer 133 is formed over the substrate 100.

There is no particular limitation on a substrate that can be used, aslong as it has heat resistance high enough to withstand heat treatmentperformed later. A single crystal semiconductor substrate or apolycrystalline semiconductor substrate of silicon, silicon carbide, orthe like or a compound semiconductor substrate of silicon germanium orthe like may be used as the substrate 100. Alternatively, an SOIsubstrate, a substrate over which a semiconductor element is provided,or the like can be used. Further alternatively, a glass substrate ofbarium borosilicate glass, aluminoborosilicate glass, or the like, aceramic substrate, a quartz substrate, or a sapphire substrate can beused.

The base insulating layer 133 can be formed using a sputtering method, amolecular beam epitaxy (MBE) method, a chemical vapor deposition (CVD)method, a pulsed laser deposition (PLD) method, an atomic layerdeposition (ALD) method, or the like, as appropriate. When the baseinsulating layer 133 is formed by a sputtering method, an impurityelement such as hydrogen can be reduced.

The same material as the insulating film 433 described in Embodiment 1can be used as a material of the base insulating layer 133.

The base insulating layer 133, which is in contact with a first oxidesemiconductor layer which is formed later, preferably contains oxygenwhich exceeds at least the stoichiometric composition in the layer (thebulk). For example, in the case where a silicon oxide film is used asthe base insulating layer 133, the composition is SiO_((2+α))(α>0).

Next, an oxide semiconductor stack is formed over the base insulatinglayer 133.

As the first oxide semiconductor layer 51, a material film which can berepresented as M1_(a)M2_(b)M3_(c)O_(x) (a is a real number greater thanor equal to 0 and less than or equal to 2, b is a real number greaterthan 0 and less than or equal to 5, c is a real number greater than orequal to 0 and less than or equal to 5, and x is an arbitrary realnumber) is used. In this embodiment, an In—Ga—Zn-based oxide film whichis deposited using a sputtering target having an atomic ratio ofIn:Ga:Zn=1:3:2 and has a thickness greater than or equal to 5 nm andless than or equal to 40 nm is used. Further, the first oxidesemiconductor layer may have an amorphous structure but is preferably aCAAC-OS film.

As the second oxide semiconductor layer S2, a material film which can berepresented as M4_(d)M5_(e)M6_(f)O_(x) (d is a real number greater than0 and less than or equal to 5, e is a real number greater than or equalto 0 and less than or equal to 3, f is a real number greater than 0 andless than or equal to 5, and x is an arbitrary positive number) is used.In this embodiment, an In—Ga—Zn-based oxide film is deposited to athickness greater than or equal to 5 nm and less than or equal to 40 nmby a sputtering method using a sputtering target having an atomic ratioof In:Ga:Zn=3:1:2 in an oxygen atmosphere, a mixed atmosphere containingoxygen and nitrogen, a mixed atmosphere containing a rare gas, oxygen,and nitrogen, or a nitrogen atmosphere. The second oxide semiconductorlayer is preferably a CAAC-OS film.

As the third oxide semiconductor layer S3, a material film which can berepresented as M7_(g)M8_(h)M9_(i)O_(x) (g is a real number greater thanor equal to 0 and less than or equal to 2, h is a real number greaterthan 0 and less than or equal to 5, i is a real number greater than orequal to 0 and less than or equal to 5, and x is an arbitrary realnumber) is used. In this embodiment, an In—Ga—Zn-based oxidesemiconductor film which is deposited by a sputtering method using asputtering target having an atomic ratio of In:Ga:Zn=1:1:1 and has athickness greater than or equal to 5 nm and less than or equal to 40 nmis used. The third oxide semiconductor layer may be amorphous but ispreferably a CAAC-OS film. The third oxide semiconductor layer is incontact with a source electrode layer and a drain electrode layer,whereby the threshold voltage is determined.

With such a stacked-layer structure, the channel formation region thatis part of the second oxide semiconductor layer and is to be formedlater is not in contact with the insulating film containing silicon.

The three oxide semiconductor layers are formed using polycrystallinetargets as sputtering targets to be CAAC-OS films.

Next, a mask is formed over the three oxide semiconductor layers by aphotolithography step, and then part of the three oxide semiconductorlayers is etched using the mask, so that a stack of oxide semiconductorlayers is formed as illustrated in FIG. 18A. After that, the mask isremoved. In this stage, to prevent generation of a parasitic channel, ataper angle formed by an end surface of the first oxide semiconductorlayer and a surface of the base insulating layer 133 is greater than orequal to 10° and less than or equal to 60°, preferably greater than orequal to 20° and less than or equal to 40°. Further, a taper angleformed by an end surface of the second oxide semiconductor layer and thesurface of the base insulating layer 133 is greater than or equal to 10°and less than or equal to 60°, preferably greater than or equal to 20°and less than or equal to 40°. Moreover, a taper angle formed by an endsurface of the third oxide semiconductor layer and the surface of thebase insulating layer 133 is greater than or equal to 10° and less thanor equal to 60°, preferably greater than or equal to 20° and less thanor equal to 40°.

Note that heat treatment for supplying oxygen from the base insulatinglayer 133 to the second oxide semiconductor layer may be performedeither before or after the oxide semiconductor layers are processed intoan island shape. Note that it is preferable to perform the heattreatment before the oxide semiconductor layers are processed into anisland shape because the amount of oxygen released from the baseinsulating layer 133 to the outside is small and thus the larger amountof oxygen can be supplied to the second oxide semiconductor layer.

Subsequently, the gate insulating layer 102 is formed over the stack ofoxide semiconductor layers.

As the gate insulating layer 102, an oxide insulating layer formed ofsilicon oxide, gallium oxide, aluminum oxide, silicon oxynitride,silicon nitride oxide, hafnium oxide, tantalum oxide, or the like ispreferably used. Alternatively, when a high-k material such as hafniumoxide, yttrium oxide, hafnium silicate (HfSi_(x)O_(y) (x>0, y>0)),hafnium silicate to which nitrogen is added (HfSi_(x)O_(y) (x>0, y>0)),hafnium aluminate (HfAl_(x)O_(y) (x>0, y>0)), or lanthanum oxide is usedfor the gate insulating layer 102, gate leakage current can be reduced.Further, the gate insulating layer 102 may have either a single-layerstructure or a stacked-layer structure. In the case where the gateinsulating layer 102 has a stacked-layer structure, a silicon nitridefilm can be used for the gate insulating layer 102 as long as thesilicon nitride film not in contact with the third oxide semiconductorlayer.

The thickness of the gate insulating layer 102 is greater than or equalto 1 nm and less than or equal to 100 nm, and the gate insulating layer102 can be formed using a sputtering method, an MBE method, a CVDmethod, a PLD method, an ALD method, or the like as appropriate. Thegate insulating layer may be formed using a sputtering apparatus whichperforms deposition with surfaces of a plurality of substrates setsubstantially perpendicular to a surface of a sputtering target.

Like the base insulating layer 133, the gate insulating layer 102 is incontact with the oxide semiconductor layer. Therefore, a large amount ofoxygen, which exceeds at least the stoichiometric composition, ispreferably contained in the layer (the bulk).

In this embodiment, a 20-nm-thick silicon oxynitride film formed by aCVD method is used as the gate insulating layer 102.

Next, a conductive film is formed over the gate insulating layer 102 anda mask is formed by a photolithography step. Then, part of theconductive film is etched using the mask, whereby the gate electrodelayer 101 is formed.

The gate electrode layer 101 can be formed using a metal material suchas molybdenum, titanium, tantalum, tungsten, aluminum, copper, chromium,neodymium, or scandium or an alloy material which contains any of thesematerials as its main component. Alternatively, a semiconductor filmtypified by a polycrystalline silicon film doped with an impurityelement such as phosphorus, or a silicide film such as a nickel silicidefilm may be used as the gate electrode layer 101. The gate electrodelayer 101 can also be formed using a conductive material such as indiumtin oxide, indium oxide containing tungsten oxide, indium zinc oxidecontaining tungsten oxide, indium oxide containing titanium oxide,indium tin oxide containing titanium oxide, indium zinc oxide, or indiumtin oxide to which silicon oxide is added. It is also possible that thegate electrode layer 101 has a stacked-layer structure of the aboveconductive material and the above metal material.

As one layer of the gate electrode layer 101 which is in contact withthe gate insulating layer 102, a metal oxide containing nitrogen,specifically, an In—Ga—Zn—O film containing nitrogen, an In—Sn—O filmcontaining nitrogen, an In—Ga—O film containing nitrogen, an In—Zn—Ofilm containing nitrogen, a Sn—O film containing nitrogen, an In—O filmcontaining nitrogen, or a metal nitride (e.g., InN or SnN) film can beused. These films each have a work function of 5 eV or higher,preferably 5.5 eV or higher, which enables the threshold voltage of thetransistor to be positive when used as a gate electrode. Accordingly,what is called a normally off switching element can be provided.

The thickness of the gate electrode layer 101 is preferably greater thanor equal to 50 nm and less than or equal to 300 nm. In this embodiment,a stack of a 30-nm-thick tantalum nitride and a 200-nm-thick tungsten isformed by a sputtering method.

Then, the gate insulating layer 102 is selectively removed using thegate electrode layer 101 as a mask, whereby part of the three oxidesemiconductor layers is exposed. At this stage, a structure illustratedin FIG. 18A can be obtained.

Next, an impurity element for reducing resistance is introduced into theoxide semiconductor layers using the gate electrode layer 101 as a mask,whereby low-resistance regions are formed in regions that do not overlapwith the gate electrode layer. As the method for adding the impurityelement, an ion implantation method, an ion doping method, a plasmaimmersion ion implantation method, or the like can be used.

Phosphorus, boron, nitrogen, arsenic, argon, aluminum, a molecular ioncontaining any of the above element, or the like can be used as theimpurity element to be introduced. The dosage of such an element ispreferably 1×10¹³ ions/cm² to 5×10¹⁶ ions/cm². When phosphorus isintroduced as the impurity element, the acceleration voltage ispreferably 0.5 kV to 80 kV.

Note that the treatment for introducing the impurity element into thethree oxide semiconductor layers may be performed plural times. In thecase where the treatment for introducing the impurity element into thethree oxide semiconductor layers is performed plural times, the impurityelement may be the same in all of the plural times of treatment or maydiffer between the plural times of treatment.

Here, since the impurity element is introduced into the three oxidesemiconductor layers, the resistance of each of the three oxidesemiconductor layers can be reduced and part of the three oxidesemiconductor layers can be amorphized, whereby nitrogen easily diffusesinto the uppermost oxide semiconductor layer at the time of forming asilicon nitride film to be formed later, and the resistance of thelow-resistance regions can be further reduced.

Although depending on conditions at the time of introducing the impurityelement or the thickness of each of the three oxide semiconductorlayers, the low-resistance regions are formed at least in regions of thethird oxide semiconductor layer S3 which do not overlap with the gateelectrode layer. Further, the impurity element can be introduced intoregions of the second oxide semiconductor layer S2 which do not overlapwith the gate electrode layer and can be introduced into regions of thefirst oxide semiconductor layer S1 which do not overlap with the gateelectrode layer. In this embodiment, the impurity element is introducedinto the regions of the second oxide semiconductor layer S2 which do notoverlap with the gate electrode layer and the regions of the first oxidesemiconductor layer S1 which do not overlap with the gate electrodelayer. At this stage, a structure illustrated in FIG. 18B is obtained.

Next, the silicon nitride film 107 which covers the gate electrode layer101 and is on and in contact with the third oxide semiconductor layer isformed. The silicon nitride film 107 is preferably formed using asilicon nitride film which is deposited by a plasma CVD method in whicha mixed gas of silane (SiH₄) and nitrogen (N₂) is supplied. The siliconnitride film also functions as a barrier film and prevents hydrogen or ahydrogen compound from entering an oxide semiconductor layer to beformed later, thereby improving the reliability of the semiconductordevice. The silicon nitride film 107 may be formed by a sputteringmethod in a nitrogen atmosphere. Nitrogen is introduced into regions inthe vicinity of the surface of the oxide semiconductor layer in contactwith the silicon nitride film 107, whereby the resistance of the regionsis reduced.

Through the above process, the oxide semiconductor stack 109 that isformed of the first oxide semiconductor layer S1 including the firstregion 104 a, the second region 103 a, and the third region 108 a; thesecond oxide semiconductor layer S2 including the fourth region 104 b,the channel formation region 103 b, and the fifth region 108 b; and thethird oxide semiconductor layer S3 including the low-resistance region104 c, the sixth region 103 c, and the low-resistance region 108 c canbe formed.

Since the impurity element is added, the low-resistance region 104 c andthe low-resistance region 108 c have an amorphous structure. Inaddition, since nitrogen diffuses into the low-resistance region 104 cand the low-resistance region 108 c, the low-resistance region 104 c andthe low-resistance region 108 c contain a larger amount of nitrogen thanthe sixth region 103 c. Furthermore, the first region 104 a and thethird region 108 a, which are the regions of the first oxidesemiconductor layer S1 that do not overlap with the gate electrodelayer, have an amorphous structure because the impurity element is addedthereto.

Next, regions of the silicon nitride film 107 which overlap with thelow-resistance region 104 c and the low-resistance region 108 c arepartly etched, so that openings which reach the low-resistance region104 c and the low-resistance region 108 c are formed. The openings areformed by selective etching using a mask or the like. Dry etching, wetetching, or both wet etching and dry etching can be used to form theopenings. There is no particular limitation on the shapes of theopenings as long as the openings reach the low-resistance region 104 cand the low-resistance region 108 c.

Then, a conductive film is formed in and over the openings. After that,a mask is formed by a photolithography step and the conductive film ispartly etched using the mask, so that the electrode layers 105 a and 105b are formed (see FIG. 18D). The electrode layers 105 a and 105 b can beformed using a material and a method similar to those used for the gateelectrode layer 401. In this embodiment, a tungsten film is used as theconductive film.

Through the above process, the transistor 120 can be manufactured. A topview of the transistor 120 is to the same as FIG. 16A and across-sectional view taken along a chain line A-B in FIG. 16Acorresponds to FIG. 18D.

The channel formation region 103 b, the second region 103 a, and thesixth region 103 c of the transistor 120 remain CAAC-OS films becausenitrogen is not added thereto; accordingly, a highly reliablesemiconductor device can be obtained.

The structure of the semiconductor device of this embodiment is notlimited to the one illustrated in FIG. 18D. Alternatively, a structureof a transistor illustrated in FIG. 19D, FIG. 20E, FIG. 21A, or FIG. 21Bmay be employed.

The transistor 122 illustrated in FIG. 19D has a structure in whichsidewall insulating layers (also referred to as sidewalls) are providedon the side surface of the gate electrode layer 101. A method formanufacturing the transistor 122 is described below.

The process up to the step in FIG. 18A is the same in the method;therefore, the description thereof is omitted here. FIG. 19A has thesame structure as FIG. 18A.

After the same state as FIG. 19A is obtained, the silicon nitride film107 is formed. By forming the silicon nitride film 107, thelow-resistance region 104 c and the low-resistance region 108 c areformed. A state at this stage corresponds to FIG. 19B.

Next, the silicon nitride film 107 is partly etched, so that sidewallinsulating layers 113 a and 113 b are formed.

Then, the impurity element for reducing resistance is introduced intothe oxide semiconductor layer using the gate electrode layer 101 and thesidewall insulating layers 113 a and 113 b as masks. A state at thisstage corresponds to FIG. 19C.

Note that a seventh region 106 a which overlaps with the sidewallinsulating layer 113 a and an eighth region 106 b which overlaps withthe sidewall insulating layer 113 b are formed in the third oxidesemiconductor layer. The seventh region 106 a and the eighth region 106b contain a larger amount of nitrogen than the sixth region 103 c.Further, since phosphorus or boron is added to the low-resistance region104 c and the low-resistance region 108 c after the formation of thesidewall insulating layers 113 a and 113 b, the low-resistance region104 c and the low-resistance region 108 c have lower resistance than theseventh region 106 a and the eighth region 106 b to which phosphorus orboron is not added.

Next, a conductive film is formed and then a mask is formed by aphotolithography step. After that, the conductive film is partly etchedusing the mask, whereby the electrode layers 105 a and 105 b are formed.Areas where the electrode layers 105 a and 105 b are in contact with theoxide semiconductor layer are large; therefore, the resistance can bereduced, so that the operation speed of the semiconductor device can beincreased.

Then, to reduce surface roughness due to the transistor 122, aninterlayer insulating layer 111 serving as a planarization film isprovided. The interlayer insulating layer 111 can be formed using anorganic material such as a polyimide resin or an acrylic resin. Otherthan such an organic material, it is also possible to use a lowdielectric constant material (low-k material) or the like. Note that theplanarization insulating film may be formed by stacking a plurality ofinsulating films formed from these materials.

Through the above process, the transistor 122 illustrated in FIG. 19Dcan be manufactured.

A top view of the transistor 122 is illustrated in FIG. 20A. A crosssection taken along a chain line C-D in FIG. 20A corresponds to FIG.19D. In addition, a cross section taken along a chain line E-F in FIG.20A is illustrated in FIG. 20B.

As illustrated in FIG. 20B, an end surface of the second region 103 a iscovered with the gate insulating layer 102. A taper angle formed by theend surface of the second region 103 a and a surface of the baseinsulating layer 133 is greater than or equal to 10° and less than orequal to 60° and preferably greater than or equal to 20° and less thanor equal to 40°. Similarly, an end surface of the channel formationregion 103 b is covered with the gate insulating layer 102. A taperangle formed by the end surface of the channel formation region 103 band the surface of the base insulating layer 133 is greater than orequal to 10° and less than or equal to 60° and preferably greater thanor equal to 20° and less than or equal to 40°. Similarly, an end surfaceof the sixth region 103 c is covered with the gate insulating layer 102.A taper angle formed by the end surface of the sixth region 103 c andthe surface of the base insulating layer 133 is greater than or equal to10° and less than or equal to 60° and preferably greater than or equalto 20° and less than or equal to 40°. In this manner, the use of thestructure in which at least the end surface of the channel formationregion 103 b is covered with the gate insulating layer 102 and the taperangle formed by the end surface of each oxide semiconductor layer andthe surface of the base insulating layer 133 is greater than or equal to20° and less than or equal to 40° can prevent generation of a parasiticchannel.

To reduce leakage, a structure of a transistor illustrated in FIG. 20Emay be employed. A transistor 124 illustrated in FIG. 20E is astructural example partly different from the structure in FIG. 19D. Thetransistor 124 in FIG. 20E has a structure in which the side surface ofthe first oxide semiconductor layer and the side and top surfaces of thesecond oxide semiconductor layer are covered with the third oxidesemiconductor layer. The third oxide semiconductor layer has a largerplanar area than the second oxide semiconductor layer and the firstoxide semiconductor layer. FIG. 20C is a top view of the transistor 124,in which the peripheries of the second and first oxide semiconductorlayers are represented by a chain line inside the periphery of the thirdoxide semiconductor layer. A cross section taken along a chain line G-Hand a cross section taken along a dotted line K-J in FIG. 20C correspondto FIG. 20E and FIG. 20D, respectively.

The transistor 124 in FIG. 20D is formed in such a manner that the baseinsulating layer 133 is formed over the substrate 100, the first oxidesemiconductor layer and the second oxide semiconductor layer are formedby patterning using one mask, and then the third oxide semiconductorlayer is formed. By forming the first and second oxide semiconductorlayers using a different mask from the third oxide semiconductor layer,the structure in which the side surface of the first oxide semiconductorlayer and the side and top surfaces of the second oxide semiconductorlayer are covered with the third oxide semiconductor layer can beobtained as illustrated in FIG. 20D. Such a structure enables areduction in leakage current which is generated between the electrodelayer 105 a and the electrode layer 105 b.

Also in the transistor 124, a taper angle formed by an end surface ofthe second region 103 a and the surface of the base insulating layer 133is greater than or equal to 10° and less than or equal to 60° andpreferably greater than or equal to 20° and less than or equal to 40°.Similarly, a taper angle formed by an end surface of the channelformation region 103 b and the surface of the base insulating layer 133is greater than or equal to 10° and less than or equal to 60° andpreferably greater than or equal to 20° and less than or equal to 40°.Further, a taper angle formed by an end surface of the sixth region 103c and the surface of the base insulating layer 133 is greater than orequal to 10° and less than or equal to 60° and preferably greater thanor equal to 20° and less than or equal to 40°.

The transistor 121 illustrated in FIG. 21A is a structural examplepartly different from the structure in FIG. 18D. The transistor 121 inFIG. 21A has a structure in which the side surface of the first oxidesemiconductor layer and the side and top surfaces of the second oxidesemiconductor layer are covered with the third oxide semiconductorlayer.

The transistor 121 in FIG. 21A is formed in such a manner that the baseinsulating layer 133 is formed over the substrate 100, the first oxidesemiconductor layer and the second oxide semiconductor layer are formedby patterning using one mask, and then the third oxide semiconductorlayer is formed. By forming the first and second oxide semiconductorlayers using a different mask from the third oxide semiconductor layer,the structure in which the side surface of the first oxide semiconductorlayer and the side and top surfaces of the second oxide semiconductorlayer are covered with the third oxide semiconductor layer can beobtained as illustrated in FIG. 21A.

Then, the gate insulating layer 102 is formed, and the gate electrodelayer 101 is formed. After an impurity element is added, the siliconnitride film 107 is formed. Subsequently, openings are formed in thesilicon nitride film and a conductive film is formed. After theconductive film is formed in and over the openings, a mask is formed bya photolithography step. Then, the conductive film is partly etchedusing the mask, so that the electrode layers 105 a and 105 b functioningas a source electrode layer and a drain electrode layer are formed.

Through the above process, the transistor 121 illustrated in FIG. 21Acan be manufactured.

A transistor 130 illustrated in FIG. 21B is formed in such a manner thatafter the three oxide semiconductor layers are formed, the electrodelayers 105 a and 105 b are formed; the gate electrode layer 101 isformed; and then the impurity element is added using the electrodelayers 105 a and 105 b and the gate electrode layer 101 as masks. Thetransistor 130 has substantially the same structure as the transistor inFIG. 18D except for formation order of the electrode layers 105 a and105 b and the gate electrode layer 101.

A method for manufacturing the transistor 130 is described below.

First, the base insulating layer 133 is formed over the substrate 100.Next, the first oxide semiconductor layer S1, the second oxidesemiconductor layer S2, and the third oxide semiconductor layer S3 areformed in this order.

As the first oxide semiconductor layer S1, an In—Ga—Zn-based oxide filmwhich is deposited in an oxygen atmosphere (oxygen: 100%) by asputtering method using a sputtering target having an atomic ratio ofIn:Ga:Zn=1:1:1 is used.

As the second oxide semiconductor layer S2, an In—Ga—Zn-based oxide filmwhich is formed in an oxygen atmosphere (oxygen: 100%) by a sputteringmethod using a sputtering target having an atomic ratio ofIn:Ga:Zn=3:1:2 is used.

As the third oxide semiconductor layer S3, an In—Ga—Zn-based oxide filmwhich is formed in an oxygen atmosphere (oxygen: 100%) by a sputteringmethod using a sputtering target having an atomic ratio ofIn:Ga:Zn=1:3:2 is used.

Next, a mask is formed by a photolithography step, and then the threeoxide semiconductor layers are partly etched using the mask, whereby astack of oxide semiconductor layers is formed.

Then, a conductive film covering the stack of oxide semiconductor layersis formed. After that, a mask is formed by a photolithography step andthe conductive film is partly etched using the mask, so that theelectrode layers 105 a and 105 b are formed.

Subsequently, an insulating film is formed to cover the electrode layers105 a and 105 b, and then a conductive film is formed. After a mask isformed by a photolithography step, the conductive film is partly etchedusing the mask, whereby the gate electrode layer 101 is formed. Then,regions of the insulating film which do not overlap with the gateelectrode layer 101 are etched using the same mask, so that the gateinsulating layer 102 is formed.

Next, the impurity element for reducing resistance is introduced into atleast the third oxide semiconductor layer using the gate electrode layer101 and the electrode layers 105 a and 105 b as masks, whereby thelow-resistance regions 104 c and 108 c are formed in regions which donot overlap with the gate electrode layer and the electrode layers 105 aand 105 b.

Then, the silicon nitride film 107 which covers the gate electrode layer101 and is on and in contact with the low-resistance regions 104 c and108 c is formed.

Through the above process, the transistor 130 which includes the oxidesemiconductor stack 109 that is formed of the first oxide semiconductorlayer 51 including the first region 104 a, the second region 103 a, andthe third region 108 a; the second oxide semiconductor layer S2including the fourth region 104 b, the channel formation region 103 b,and the fifth region 108 b; and the third oxide semiconductor layer S3including the low-resistance region 104 c, the sixth region 103 c, andthe low-resistance region 108 c can be formed.

Note that in the case where a conductive film which can function as aback gate is provided below the oxide semiconductor stack 109 of thetransistor 130, the conductive film may be provided between thesubstrate 100 and the base insulating layer 133. In such a case, thebase insulating layer 133 is preferably subjected to planarizationtreatment by chemical mechanical polishing (CMP).

This embodiment can be freely combined with any of other embodiments.

Embodiment 9

As another example of a semiconductor device including the transistordescribed in Embodiment 7, a cross-sectional view of a NOR circuit,which is a logic circuit, is illustrated in FIG. 23A. FIG. 23B is acircuit diagram of the NOR circuit in FIG. 23A, and FIG. 23C is acircuit diagram of a NAND circuit.

In the NOR circuit illustrated in FIGS. 23A and 23B, the p-channeltransistors 801 and 802 each have a structure similar to that of thetransistor 750 in FIGS. 22A and 22B in that a single crystal siliconsubstrate is used for a channel formation region, and the n-channeltransistors 803 and 804 each have a structure similar to that of thetransistor 610 in FIGS. 22A and 22B and that of the transistor 130 inEmbodiment 7 in that an oxide semiconductor film is used for a channelformation region.

In the NOR circuit and the NAND circuit illustrated in FIGS. 23A and23B, a conductive layer 191 for controlling electrical characteristicsof the transistors is provided to overlap with gate electrode layerswith oxide semiconductor films provided therebetween in the transistors803 and 804. By controlling the potential of the conductive layer toGND, for example, the threshold voltages of the transistors 803 and 804are increased, so that the transistors can be normally off. In the NORcircuit in this embodiment, conductive layers which are provided in thetransistors 803 and 804 and can function as back gates are electricallyconnected to each other. However, the present invention is not limitedto the structure, and the conductive layers functioning as back gatesmay be electrically controlled independently.

In the semiconductor device illustrated in FIG. 23A, a single crystalsilicon substrate is used as the substrate 800, the transistor 802 isformed using the single crystal silicon substrate, and the transistor803 in which stacked oxide semiconductor films are used for a channelformation region is formed over the transistor 802.

The gate electrode layer 101 of the transistor 803 is electricallyconnected to the wiring layer 832. The wiring layer 832 is electricallyconnected to the wiring layer 835. The gate electrode layer 101 of thetransistor 803 is electrically connected to an embedded wiring, and theembedded wiring is electrically connected to the electrode layer 842.Note that the embedded wiring includes a first barrier metal film 186, asecond barrier metal film 188, and a low-resistance conductive layer 187surrounded by the first barrier metal film 186 and the second barriermetal film 188.

The embedded wiring is formed in such a manner that a contact holereaching the electrode layer 842 is formed in an interlayer insulatingfilm 185, the first barrier metal film 186 is formed, and a copper filmor a copper alloy film is formed thereover so as to form thelow-resistance conductive layer 187. Then, polishing is performed forplanarization, and the second barrier metal film 188 is formed so as toprotect the exposed low-resistance conductive layer 187.

Each of the first barrier metal film 186 and the second barrier metalfilm 188 may be formed using a conductive material which suppressesdiffusion of copper contained in the low-resistance conductive layer187. Examples of the conductive material are a tantalum nitride film, amolybdenum nitride film, and a tungsten nitride film.

The wiring layer 832 is provided in an opening formed in an insulatingfilm 826 and an insulating film 830. The wiring layer 835 is provided inan opening formed in an insulating film 833. The electrode layer 842 isformed over the wiring layer 835.

The electrode layer 825 of the transistor 802 is electrically connectedthe electrode layer 105 b of the transistor 803 through the wiringlayers 831 and 834. The wiring layer 831 is formed in an opening in theinsulating film 830, and the wiring layer 834 is formed in an opening inthe insulating film 833. The electrode layer 105 a and the electrodelayer 105 b function as source and drain electrode layers of thetransistor 803.

Three oxide semiconductor layers are formed on and in contact with theinsulating film 137. With the insulating film 137 and the gateinsulating layer 102, unnecessary release of oxygen can be suppressed,and the channel formation region 103 b can be kept in an oxygen excessstate. Thus, in the transistor 803, oxygen vacancies in the channelformation region and at the interface thereof can be filled efficiently.The transistor 804 has a structure and an effect which are similar tothose of the transistor 803.

In the NAND circuit in FIG. 23C, the p-channel transistors 811 and 814each have a structure similar to that of the transistor 750 in FIGS. 22Aand 22B, and the n-channel transistors 812 and 813 each have a structuresimilar to that of the transistor 610 in FIGS. 22A and 22B in that anoxide semiconductor film is used for a channel formation region.

In the NAND circuit illustrated in FIG. 23C, conductive layerscontrolling electrical characteristics of the transistors are providedto overlap with gate electrode layers with oxide semiconductor filmsprovided therebetween in the transistors 812 and 813. By controlling thepotential of the conductive layer to GND, for example, the thresholdvoltages of the transistors 812 and 813 are increased, so that thetransistors can be normally off. In the NAND circuit in this embodiment,the conductive layers which are provided in the transistors 812 and 813and function as back gates are electrically connected to each other.However, the present invention is not limited to the structure, and theconductive layers functioning as back gates may be electricallycontrolled independently.

By applying a transistor including an oxide semiconductor for a channelformation region and having extremely small off-state current to thesemiconductor device in this embodiment, power consumption of thesemiconductor device can be sufficiently reduced.

A semiconductor device which is miniaturized, is highly integrated, andhas stable and excellent electrical characteristics by stackingsemiconductor elements including different semiconductor materials and amethod for manufacturing the semiconductor device can be provided.

The NOR circuit and the NAND circuit including the transistors describedin Embodiment 7 are described as examples in this embodiment; however,the present invention is not limited to the circuits, and an ANDcircuit, an OR circuit, or the like can be formed using the transistorsdescribed in Embodiment 7 or 8. For example, a semiconductor device(storage device) in which stored data can be held even when power is notsupplied and which has an unlimited number of times of writing with thetransistors described in Embodiment 7 or 8 can be manufactured.

This application is based on Japanese Patent Application serial no.2012-136438 filed with Japan Patent Office on Jun. 15, 2012 and JapanesePatent Application serial no. 2012-141373 filed with Japan Patent Officeon Jun. 22, 2012, the entire contents of which are hereby incorporatedby reference.

What is claimed is:
 1. A semiconductor device comprising: an insulatinglayer over an insulating surface; a first oxide semiconductor layer overthe insulating layer; a second oxide semiconductor layer over the firstoxide semiconductor layer; a third oxide semiconductor layer over thesecond oxide semiconductor layer; a gate insulating layer over the thirdoxide semiconductor layer; and a gate electrode layer over the gateinsulating layer, wherein the second oxide semiconductor layer hashigher conductivity than the third oxide semiconductor layer and thefirst oxide semiconductor layer, and wherein the first oxidesemiconductor layer has a larger thickness than the second oxidesemiconductor layer and the third oxide semiconductor layer.
 2. Thesemiconductor device according to claim 1, wherein the second oxidesemiconductor layer has a higher nitrogen concentration than the thirdoxide semiconductor layer and the first oxide semiconductor layer. 3.The semiconductor device according to claim 1, wherein the second oxidesemiconductor layer has a higher boron concentration than the thirdoxide semiconductor layer and the first oxide semiconductor layer. 4.The semiconductor device according to claim 1, wherein the second oxidesemiconductor layer has a higher phosphorus concentration than the thirdoxide semiconductor layer and the first oxide semiconductor layer. 5.The semiconductor device according to claim 1, wherein a side surface ofthe second oxide semiconductor layer is covered with the third oxidesemiconductor layer.
 6. The semiconductor device according to claim 1,further comprising; a source electrode layer in contact with the secondoxide semiconductor layer; and a drain electrode layer in contact withthe second oxide semiconductor layer.
 7. A semiconductor devicecomprising: a first gate electrode layer over an insulating surface; aninsulating layer over the first gate electrode layer; a first oxidesemiconductor layer over the insulating layer; a second oxidesemiconductor layer over the first oxide semiconductor layer; a thirdoxide semiconductor layer over the second oxide semiconductor layer; asource electrode layer in contact with the second oxide semiconductorlayer; a drain electrode layer in contact with the second oxidesemiconductor layer; a gate insulating layer over the third oxidesemiconductor layer; and a second gate electrode layer over the gateinsulating layer, wherein the second oxide semiconductor layer hashigher conductivity than the third oxide semiconductor layer and thefirst oxide semiconductor layer, and wherein the first oxidesemiconductor layer has a larger thickness than the second oxidesemiconductor layer and the third oxide semiconductor layer.
 8. Thesemiconductor device according to claim 7, wherein the second oxidesemiconductor layer has a higher nitrogen concentration than the thirdoxide semiconductor layer and the first oxide semiconductor layer. 9.The semiconductor device according to claim 7, wherein the second oxidesemiconductor layer has a higher boron concentration than the thirdoxide semiconductor layer and the first oxide semiconductor layer. 10.The semiconductor device according to claim 7, wherein the second oxidesemiconductor layer has a higher phosphorus concentration than the thirdoxide semiconductor layer and the first oxide semiconductor layer. 11.The semiconductor device according to claim 7, wherein a side surface ofthe second oxide semiconductor layer is covered with the third oxidesemiconductor layer.
 12. A semiconductor device comprising: a firstinsulating layer over an insulating surface; a first oxide semiconductorlayer over the first insulating layer; a second oxide semiconductorlayer over the first oxide semiconductor layer; a third oxidesemiconductor layer over the second oxide semiconductor layer; a secondinsulating layer on and in contact with the third oxide semiconductorlayer; a gate electrode layer over the second insulating layer; and athird insulating layer on and in contact with the third oxidesemiconductor layer, wherein the second oxide semiconductor layer has asmaller thickness than the first oxide semiconductor layer and the thirdoxide semiconductor layer.
 13. The semiconductor device according toclaim 12, wherein a region of the third oxide semiconductor layer whichis in contact with the third insulating layer has low crystallinity andhas a higher nitrogen concentration than a region of the third oxidesemiconductor layer which is in contact with the second insulatinglayer, and wherein the region of the third oxide semiconductor layerwhich is in contact with the second insulating layer overlaps with achannel formation region of the second oxide semiconductor layer. 14.The semiconductor device according to claim 12, wherein the thirdinsulating layer is a silicon nitride film.
 15. The semiconductor deviceaccording to claim 12, wherein the third insulating layer is a sidewallthat is provided on a side surface of the gate electrode layer.
 16. Thesemiconductor device according to claim 12, wherein a taper angle formedby an end surface of the first oxide semiconductor layer and a surfaceof the first insulating layer is greater than or equal to 10° and lessthan or equal to 60°.
 17. The semiconductor device according to claim12, wherein a taper angle formed by an end surface of the second oxidesemiconductor layer and a surface of the first insulating layer isgreater than or equal to 10° and less than or equal to 60°.
 18. Thesemiconductor device according to claim 12, wherein a taper angle formedby an end surface of the third oxide semiconductor layer and a surfaceof the first insulating layer is greater than or equal to 10° and lessthan or equal to 60°.
 19. The semiconductor device according to claim12, wherein an end surface of the first oxide semiconductor layer and anend surface of the second oxide semiconductor layer are covered with thethird oxide semiconductor layer.
 20. The semiconductor device accordingto claim 12, further comprising a second gate electrode layer betweenthe insulating surface and the first insulating layer.